Thin film transistor array panel and manufacturing method thereof

1. A thin film transistor (TFT) array panel, comprising:

an insulating substrate;

first and second semiconductor members formed on the substrate and having opposite conductivity;

a first gate member formed on a first layer, insulated from the first and the second semiconductor members and overlapping one of the first and the second semiconductor members;

a second gate member formed on the first layer, separated from the first gate member, and insulated from the first and the second semiconductor members, the second gate member not overlapping the first and the second semiconductor members;

a first data member formed on a second layer, connected to one of the first and the second semiconductor members and insulated from the first and the second gate members; and

a first connection formed on the second layer and connecting the first gate member and the second gate member.

2. The TFT array panel of claim 1 , wherein the first and the second semiconductor members comprise polysilicon.

3. The TFT array panel of claim 2 , wherein the first gate member overlaps the first semiconductor member.

4. The TFT array panel of claim 3 , further comprising a third gate member formed on the first layer, separated from the first and the second gate members, insulated from the first and the second semiconductor members, and overlapping the second semiconductor member.

5. The TFT array panel of claim 4 , further comprising a second connection formed on the second layer and connecting the second gate member and the third gate member.

6. The TFT array panel of claim 4 , further comprising:

a fourth gate member formed on the first layer, separated from the first, the second, and the third gate members and insulated from the first and the second semiconductor members, the fourth gate member not overlapping the first and the second semiconductor members; and

a second connection formed on the second layer and connecting the third gate member and the fourth gate member.

7. The TFT array panel of claim 6 , further comprising:

fifth and sixth gate members formed on the first layer, separated from the first to the fourth gate members, insulated from the first and the second semiconductor members, and overlapping the first and the second semiconductor members, respectively;

a seventh gate member formed on the first layer, separated from the first to the sixth gate members and insulated from the first and the second semiconductor members, the seventh gate member not overlapping the first and the second semiconductor members; and

third and fourth connections formed on the second layer and connecting the fifth and the sixth gate members to the seventh gate member.

8. The TFT array panel of claim 7 , further comprising a fifth connection formed on the second layer and connecting the first semiconductor member and the second semiconductor member.

9. The TFT array panel of claim 8 , further comprising:

third and fourth semiconductor members formed on the substrate and having opposite conductivity;

eighth and ninth gate members formed on the first layer, separated from the first to the seventh gate members, insulated from the first to the fourth semiconductor members, overlapping the third and the fourth semiconductor members, respectively; and

sixth and seventh connections formed on the second layer and connecting the fifth and the sixth gate members to the eighth and the ninth gate members, respectively.

10. The TFT array panel of claim 9 , further comprising;

tenth and eleventh gate members formed on the first layer, insulated from the first to the fourth semiconductor members and overlapping the third and the fourth semiconductor members, respectively; twelfth and thirteenth gate members formed on the first layer, separated from the first to the eleventh gate members, and insulated from the third and the fourth semiconductor members, the twelfth and the thirteenth gate members not overlapping the first to the fourth semiconductor members; and

eighth and ninth connections formed on the second layer and connecting the tenth and the eleventh gate members to the twelfth and the thirteenth gate members, respectively.

11. The TFT array panel of claim 10 , further comprising a tenth connection formed on the second layer and connecting the third semiconductor member and the fourth semiconductor member.

12. The TFT array panel of claim 11 , wherein the first data member is connected to the first and the third semiconductor members.

13. The TFT array panel of claim 12 , further comprising a second data member connected to the second and the fourth semiconductor members and insulated from the first to the thirteenth gate members.

14. The TFT array panel of claim 13 , wherein the first data member transmits a gate-off voltage for turning off a thin film transistor and the second data member transmits a gate-on voltage for turning on the thin film transistor.

15. The TFT array panel of claim 1 , further comprising:

a first insulating layer interposed between the first and the second semiconductor members and the first and the second gate members; and

a second insulating layer interposed between the first and the second gate members and the first data member,

wherein the second insulating layer has a first contact hole for connecting the first gate member and the second gate member, and the first and the second insulating layer has a second contact hole for connecting the first data member and the one of the first and the second semiconductor members.