Semiconductor apparatus including power semiconductor device constructed by using wide band gap semiconductor
View Patent ↗A semiconductor apparatus includes a semiconductor chip 61 including a power semiconductor device using a wide band gap semiconductor, base materials 62 and 63 , first and second intermediate members 65 and 68 a , a heat conducting member 66 , a radiation fin 67 , and an encapsulating material 68 for encapsulating the semiconductor chip 61 , the first and second intermediate member 65 and 68 a and the heat conducting member 66 . The tips of the base materials 62 and 63 work respectively as external connection terminals 62 a and 63 a . The second intermediate member 68 a is made of a material with lower heat conductivity than the first intermediate member 65 , and a contact area with the semiconductor chip 61 is larger in the second intermediate member 68 a than in the first intermediate member.
1. A semiconductor apparatus comprising:
a semiconductor chip including a power semiconductor device constructed by using a wide band gap semiconductor, the semiconductor chip having an upper surface and a lower surface opposite to the upper surface;
a first base material made of an electrically conductive material and electrically connected to a part of the lower surface of said semiconductor chip;
a heat conducting member coming in contact with a part of the upper surface of said semiconductor chip opposite to the lower surface and releasing heat directly from said semiconductor chip; and
an encapsulating material for encapsulating said semiconductor chip and said heat conducting member,
wherein the semiconductor apparatus further comprises a second base material made of a metal material and disposed on a part of said upper surface of said semiconductor chip,
wherein said power semiconductor device is a vertical element,
wherein a part of said first base material is extruded outside said encapsulating material and works as a first external connection terminal,
wherein a part of said second base material is extruded outside said encapsulating material and works as a second external connection terminal,
wherein a first intermediate member made of an electrically conductive material and a second intermediate member made of a material having lower heat conductivity than said first intermediate member are provided under the lower surface of said semiconductor chip and between said first base material and said semiconductor chip,
wherein the first intermediate member and the second intermediate member touch the lower surface of the semiconductor chip and the first base material, and an area where the second intermediate member touches the lower surface of the semiconductor chip is larger than an area where the first intermediate member touches the lower surface of the semiconductor chip, and
wherein the semiconductor chip and the first base material are electrically connected with each other through the first intermediate member, and
wherein an ohmic electrode is disposed on an entire surface of the lower surface of the semiconductor chip.
2. The semiconductor apparatus of claim 1 ,
wherein said power semiconductor device has a region where a current passes at a current density of 50 A/cm 2 or more.
3. The semiconductor apparatus of claim 1 or 2 ,
wherein said encapsulating material is made of a resin or glass, and
said heat conducting member is exposed from said encapsulating material.
4. The semiconductor apparatus of claim 3 , further comprising a radiation fin that is in contact with said heat conducting member and is extruded outside said encapsulating material.
5. The semiconductor apparatus of claim 1 or 2 , further comprising a film for covering said encapsulating material.
6. The semiconductor apparatus of claim 5 , further comprising a radiation fin opposing said heat conducting member with said film sandwiched therebetween.
7. The semiconductor apparatus of claim 1 ,
further comprising another semiconductor chip that is stacked on said semiconductor chip.
8. The semiconductor apparatus of claim 1 ,
wherein said first external connection terminal of said first base material is configured to be mounted on a print wiring board.
9. The semiconductor apparatus of claim 1 ,
wherein said wide band gap semiconductor is SiC.
10. The semiconductor apparatus of claim 1 , wherein the ohmic electrode comprises nickel.