Acoustic resonator support, acoustic resonator and corresponding integrated circuit
A support 7 for an acoustic resonator 4 includes at least one bilayer assembly having a layer of high acoustic impedance material 11 and a layer of low acoustic impedance material 12 made of material having a low electrical permittivity.
1. A support for an acoustic resonator, comprising:
at least one bilayer assembly supporting an overlying acoustic resonator, comprising:
a layer of high acoustic impedance material; and
a layer of low acoustic impedance material made of a low electrical permittivity material, wherein the low acoustic impedance material comprises SiOC;
wherein the layer of low acoustic impedance material has a thickness of less than 0.7 μm, preferably between 0.3 and 0.7 μm.
2. The support according to claim 1 , wherein the electrical permittivity of the low acoustic impedance material is less than about 4.
3. The support according to claim 2 , wherein the relative electrical permittivity of the low acoustic impedance material is less than about 2.5.
4. The support according to claim 1 , wherein the low acoustic impedance material comprises porous SiOC.
5. The support according to claim 1 , wherein it comprises no more than two bilayer assemblies.
6. The support according to claim 1 , wherein the electrical permittivity of the low-acoustic-impedance material is less than about 3.
7. A support for an acoustic resonator, comprising:
at least one bilayer assembly supporting an overlying acoustic resonator, comprising:
a layer of high acoustic impedance material; and
a layer of low acoustic impedance material made of a low electrical permittivity material, wherein the low acoustic impedance material comprises SiOC;
wherein the layer of high acoustic impedance material has a thickness of between 0.3 and 3.2 μm.
8. The support according to claim 7 , wherein the high acoustic impedance material comprises at least one material selected from the group consisting of: aluminum nitride, copper, nickel, tungsten, gold, platinum, molybdenum.
9. An acoustic resonator comprising:
an active element and
a support having at least one bilayer assembly supporting an overlying active element of the acoustic resonator, comprising:
a layer of high acoustic impedance material and
a layer of low acoustic impedance material made of a low electrical permittivity material, wherein the low-acoustic-impedance material comprises a SiOC material;
wherein the layer of low-acoustic-impedance material has a thickness of between 0.3 and 0.7 μm.
10. The resonator according to claim 9 , wherein the active element comprises at least one piezoelectric layer placed between electrodes.
11. The resonator according to claim 9 , wherein the electrical permittivity of the low-acoustic-impedance material is less than about 4.
12. The resonator according to claim 9 , wherein the support comprises no more than two bilayer assemblies.
13. An acoustic resonator comprising:
an active element and
a support having at least one bilayer assembly supporting an overlying active element of the acoustic resonator, comprising:
a layer of high acoustic impedance material and
a layer of low acoustic impedance material made of a low electrical permittivity material, wherein the low-acoustic-impedance material comprises a SiOC material;
wherein the layer of high-acoustic-impedance material has a thickness of between 0.3and 3.2 μm.
14. The resonator according to claim 13 , wherein the high-acoustic-impedance material comprises at least one material selected the group consisting of: aluminum nitride, copper, nickel, tungsten, gold, platinum, molybdenum.
15. An acoustic resonator comprising:
an active element and
a support having at least one bilayer assembly supporting an overlying active element of the acoustic resonator, comprising:
a layer of high acoustic impedance material and
a layer of low acoustic impedance material made of a low electrical permittivity material, wherein the low-acoustic-impedance material comprises a SiOC material;
wherein:
the layer of high acoustic impedance material rests on an interconnect layer of an integrated circuit, the layer of high acoustic impedance material being formed of a conductive material used in making interconnect layers of the integrated circuit; and
the layer of low acoustic impedance material is formed of an insulating material used in making interconnect layers of the integrated circuit, the layer of low acoustic impedance material resting on the layer of high acoustic impedance material and underlying the active element of the acoustic resonator.
16. The resonator as in claim 15 further comprising a second bilayer assembly resting on the bilayer assembly and underlying the active element of the acoustic resonator.
17. The resonator as in claim 15 further comprising a groove which laterally isolates the acoustic resonator from the interconnect layer of the integrated circuit.
18. The resonator as in claim 15 , wherein the interconnect layer of the integrated circuit includes a trench region, the bilayer assembly being positioned within the trench region and embedded in the interconnect layer, with a groove about the acoustic resonator to provide for lateral isolation.
19. The resonator as in claim 15 , wherein the layer of high acoustic impedance material is formed of a conductive material used in making the interconnect layer within which the bilayer assembly is embedded, and wherein the layer of low acoustic impedance material is formed of an insulating material used in making the interconnect layer within which the bilayer assembly is embedded.