Thin film transistor array panel for X-ray detector
View Patent ↗A thin film transistor array panel for an X-ray detector includes a dummy pixel including a photo diode and a TFT for detecting leakage current. The photo diode includes first and second electrodes ( 178,195 ) facing each other and a photo-conductive layer ( 800 ) disposed between the first electrode and the second electrode. The TFT includes a semiconductor layer ( 150 ), a gate electrode ( 123 ), a source electrode ( 173 ) connected to a data line, a drain electrode ( 175 ) connected to the photo diode. The dummy pixel further includes a light blocking layer ( 196 ) for blocking light incident on the photo diode. Alternatively, the semiconductor layer is disconnected between the source electrode and the drain electrode.
1. A thin film transistor array panel for an X-ray detector, the thin film transistor array panel comprising:
a gate wire formed on an insulating substrate and comprising a gate line and a gate electrode connected to the gate line;
a gate insulating layer formed on the gate wire;
a semiconductor layer formed on the gate insulating layer;
a data wire formed on the gate insulating layer and comprising:
a data line which intersects the gate line;
a source electrode connected to the data line and disposed on the semiconductor layer; and
a drain electrode disposed on the semiconductor layer separate from the source electrode;
a photo diode comprising:
a first electrode connected to the drain electrode;
a second electrode which faces the first electrode; and
a photo-conductive layer disposed between the first electrode and the second electrode;
a passivation layer disposed on the photodiode, the semiconductor layer, the data wire and the drain electrode, the passivation layer having a contact hole which exposes the second electrode; and
a bias signal line disposed directly on the passivation layer, connected to the second electrode through the contact hole and comprising a light blocking layer which covers the photo diode.
2. The thin film transistor array panel of claim 1 , wherein the photo-conductive layer comprises a first amorphous silicon film comprising an N type impurity, a second amorphous silicon film disposed on the first amorphous silicon film and comprising intrinsic amorphous silicon, and a third amorphous silicon film disposed on the second amorphous silicon film and comprising a P type impurity.
3. A thin film transistor array panel for an X-ray detector, the thin film transistor array panel comprising:
a gate wire formed on an insulating substrate and comprising a gate line and a gate electrode connected to the gate line;
a gate insulating layer formed on the gate wire;
a semiconductor layer formed on the gate insulating layer;
a data wire formed on the gate insulating layer and comprising:
a data line which intersects the gate line;
a source electrode connected to the data line and disposed on the semiconductor layer; and
a drain electrode disposed on the semiconductor layer separate from the source electrode;
a photo diode comprising:
a first electrode connected to the drain electrode;
a second electrode which faces the first electrode; and
a photo-conductive layer disposed between the first electrode and the second electrode; and
a bias signal line connected to the second electrode, wherein
the semiconductor layer is disconnected in a region disposed between the source electrode and the drain electrode, and
the region disposed between the source electrode and the drain electrode is absent semiconductor material to transmit a signal to the data line.
4. The thin film transistor array panel of claim 3 , wherein the photo-conductive layer comprises a first amorphous silicon film comprising an N type impurity, a second amorphous silicon film disposed on the first amorphous silicon film and comprising intrinsic amorphous silicon, and a third amorphous silicon film disposed on the second amorphous silicon film and comprising a P type impurity.