Method for manufacturing electronic device and electronic device
View Patent ↗A method for manufacturing an electronic device comprises a step for forming a coating film ( 100 ) on a surface of a conductor portion-containing body ( 500 ), a step for forming a photosensitive film ( 110 ) on the conductor ( 500 ) on which the coating film ( 100 ) has been formed, a step for exposing the photosensitive film ( 110 ) to a pattern corresponding to a patterned recessed or protruded portion, a step for developing the exposed photosensitive film ( 110 ), and a step for baking the developed photosensitive film ( 110 ). With this method, an excessive removal of a metal film can be prevented or suppressed.
1. An electronic device comprising:
a first base comprising a first conductive portion and a second conductive portion, said first conductive portion containing a first metal or metal compound having a first equilibrium electrode potential, said second conductive portion being electrically connected to said first conductive portion and containing a second metal or metal compound having a second equilibrium electrode potential;
an underlying layer formed on said first base; and
a reflective portion formed on a surface of said underlying layer, said reflective portion comprising a plurality of projections or recesses;
wherein said underlying layer comprises:
coating portions provided at positions corresponding to said plurality of projections or recesses, wherein said coating portion comprises chromium molybdenum oxide; and
an underlying layer main portion formed using photosensitive material, said underlying layer main portion covering said coating portions.
2. An electronic device as claimed in claim 1 , wherein said first base comprises a supporting member, and wherein said first conductive portion is formed on said supporting member, and said second conductive portion is formed so as to lie on said first conductive portion.
3. An electronic device as claimed in claim 2 , wherein said first and second conductive portions form at least part of a gate electrode, a gate bus, a source electrode or a source bus.
4. An electronic device as claimed in claim 3 , wherein said first conductive portion comprises molybdenum as said first metal or metal compound, and wherein said second conductive portion comprises aluminum as said second metal or metal compound.
5. An electronic device as claimed in claim 2 , wherein said first conductive portion is formed on an insulating film.
6. An electronic device as claimed in claim 5 , wherein said insulating film comprises silicon nitride or silicon dioxide.
7. An electronic device as claimed in claim 1 , wherein said first base comprises:
a supporting member;
said first conductive portion formed on said supporting member;
an insulating film having a hole for electrically connecting said first and second conductive portions; and
said second conductive portion electrically connected to said first conductive portion through said hole.
8. An image display device comprising an electronic device as claimed in claim 1 .
9. An electronic device comprising:
a first base comprising a first conductive portion and a second conductive portion, said first conductive portion containing a first metal or metal compound having a first equilibrium electrode potential, said second conductive portion being electrically connected to said first conductive portion and containing a second metal or metal compound having a second equilibrium electrode potential, wherein said first base comprises a supporting member, wherein said first conductive portion is formed on said supporting member and said second conductive portion is formed so as to lie on said first conductive portion, wherein said first conductive portion is at least part of a gate terminal, and wherein said second conductive portion is at least part of a gate bus;
an underlying layer formed on said first base, wherein said underlying layer comprises coating portions provided at positions corresponding to said plurality of projections or recesses, said coating portion comprising chromium molybdenum oxide; and an underlying layer main portion formed using photosensitive material, said underlying layer main portion covering said coating portions; and
a reflective portion formed on a surface of said underlying layer, said reflective portion comprising a plurality of projections or recesses.
10. An electronic device as claimed in claim 9 , wherein said first conductive portion comprises indium oxide as said first metal or metal compound, and wherein said second conductive portion comprises aluminum or molybdenum as said second metal or metal compound.
11. An electronic device comprising:
a first base comprising a first conductive portion and a second conductive portion, said first conductive portion containing a first metal or metal compound having a first equilibrium electrode potential, said second conductive portion being electrically connected to said first conductive portion and containing a second metal or metal compound having a second equilibrium electrode potential, wherein said first base comprises a supporting member, wherein said first conductive portion is formed on said supporting member and said second conductive portion is formed so as to lie on said first conductive portion, wherein said first conductive portion is at least part of a source terminal, and wherein said second conductive portion is at least part of a gate electrode of an ESD transistor;
an underlying layer formed on said first base, wherein said underlying layer comprises coating portions provided at positions corresponding to said plurality of projections or recesses, said coating portion comprising chromium molybdenum oxide; and an underlying layer main portion formed using photosensitive material, said underlying layer main portion covering said coating portions; and
a reflective portion formed on a surface of said underlying layer, said reflective portion comprising a plurality of projections or recesses.
12. An electronic device comprising:
a first base comprising a first conductive portion, said first conductive portion containing a first metal or metal compound having a first equilibrium electrode potential, wherein said first conductive portion is formed on an insulating film;
an underlying layer formed on said first base; and
a reflective portion formed on a surface of said underlying layer, said reflective portion comprising a plurality of projections or recesses;
wherein said underlying layer comprises:
coating portions provided at positions corresponding to said plurality of projections or recesses, wherein said coating portion comprises chromium molybdenum oxide; and
an underlying layer main portion formed using photosensitive material, said underlying layer main portion covering said coating portions.
13. An electronic device as claimed in claim 12 , wherein said first base comprises a support member, and wherein said insulating film is formed on said supporting member, and said first conductive portion is formed on said insulating film.
14. An electronic device as claimed in claim 12 , wherein said first conductive portion is at least part of a gate terminal.
15. An electronic device as claimed in claim 12 , wherein said first conductive portion is at least part of a source terminal.
16. An electronic device as claimed in claim 12 , wherein said insulating film comprises silicon nitride or silicon dioxide.