Ge-cr alloy sputtering target and process for producing the same
A Ge—Cr alloy sputtering target containing 5 to 50 at % of Cr and having a relative density of 95% or more, and a manufacturing method of such a Ge—Cr alloy sputtering target wherein Cr powder having a minus sieve of 75 μm or less, and Ge powder having a minus sieve of 250 μm or less and having a BET specific surface area of 0.4 m 2 /g or less are dispersively mixed in an even manner, and sintered thereafter. Thereby provided is a Ge—Cr alloy sputtering target capable of suppressing variation of the deposition speed and film composition, as well as improving the production yield, of the GeCrN layer deposited with reactive sputtering as the intermediate layer between the recording layer and protective layer of a phase-change optical disk, and the manufacturing method of such a target.
1 . A Ge—Cr alloy sputtering target containing 5 to 50 at % of Cr characterizing in that said target has a relative density of 97% or more, that the density variation of said target is within ±1.5%, and that, in X-ray diffraction, the ratio B/A of the maximum peak intensity A of Ge phase in a 2θ range of 20° to 30° and of the maximum peak intensity B of GeCr compound phase in a 2θ range of 30° to 40° is 0.18 or more.
2 - 3 . (canceled)
4 . Ge—Cr alloy sputtering target according to claim 1 , wherein the composition variation in the target is within ±0.5%.
5 . (canceled)
6 . A manufacturing method of a Ge—Cr alloy sputtering target, comprising the steps of evenly dispersing and mixing Cr powder of 75 μm or less, and Ge powder of 250 μm or less and having a BET specific surface area of 0.1 to 0.4 m 2 /g, and thereafter performing sintering thereto.
7 - 9 . (canceled)
10 . A method according to claim 6 , wherein sintering is performed under the conditions of hot pressing at a sintering temperature of 760 to 900° C. and a surface pressure of 75 to 250 kg/cm 2 .
11 . A method of manufacturing a Ge—Cr alloy sputtering target, comprising the steps of evenly dispersing and mixing Cr powder of 75 μm or less, and Ge powder of 250 μm or less having a BET specific surface area of 0.1 to 0.4 m 2 /g, and thereafter performing sintering thereto, wherein said sputtering target formed by the method contains 5 to 50 at % of Cr, has a relative density of 97% or more and a density variation within ±1.5%, and has in X-ray diffraction a ratio B/A of a maximum peak intensity A of Ge phase in a 2θ range of 20° to 30° and of a maximum peak intensity B of GeCr compound phase in a 2θ range of 30° to 40°, said ratio B/A being 0.18 or more.
12 . A method according to claim 11 , wherein sintering is performed under the conditions of hot pressing at a sintering temperature of 760 to 900° C. and a surface pressure of 75 to 250 kg/cm 2 .
13 . A method according to claim 12 , wherein a composition variation in the target is within ±0.5%.
14 . A method according to claim 11 , wherein a composition variation in the target is within ±0.5%.