Electronic device including a field effect transistor having an organic semiconductor channel
View Patent ↗Provided is a filed-effect transistor with an organic semiconductor material showing ambipolar behaviour. Thereto, the organic semiconductor material enabling the ambipolar behaviour is a material with a small band gap.
1. An electronic device comprising a field-effect transistor, the field-effect transistor including a source electrode and a drain electrode that are mutually connected by a channel and a gate electrode that is separated from the channel through a dielectric layer, and
the channel consists of an organic semiconductor material with a small band gap chosen such that the field-effect transistor shows ambipolar behavior, and that the source electrode and drain electrode comprise a same material, and the organic semiconductor material is chosen from the group of the polvindenofluorenes.
2. Electronic device as claimed in claim 1 , characterized in that the source electrode and drain electrode are defined as patterns in an electrode layer.
3. Electronic device as claimed in claim 2 , characterized in that the electrode layer comprises a noble metal.
4. Electronic device as claimed in claim 2 , characterized in that a surface dipolar layer is provided between the electrode layer and the channel.
5. Electronic device as claimed in claim 1 , characterized in that the band gap is smaller than 1.8 eV.
6. Electronic device as claimed in claim 1 characterized in that the organic semiconductor material is part of an organic polymer structure said organic polymer structure being obtainable by incorporation of the organic semiconductor material into a matrix material.
7. Electronic device as claimed in claim 6 , wherein the organic polymer structure is a polymer network.
8. The electronic device of claim 1 wherein the field effect transistor is integrated in an inverter.