Adsorption, detection and identification of components of ambient air with desorption/ionization on silicon mass spectrometry (DIOS-MS)

1. A method for detecting an analyte contained in a gas comprising:

(a) directing a gas comprising an analyte onto the surface of a porous semiconductor substrate for a period of time sufficient for said analyte to be adsorbed onto said surface; and

(b) analyzing said analyte by laser desorption/ionization.

2. The method of claim 1 , wherein said porous semiconductor substrate is a porous silicon substrate.

3. The method of claim 1 , wherein said porous semiconductor substrate is affixed to a support structure.

4. The method of claim 3 , wherein said porous semiconductor substrate forms a continuous layer on said support structure.

5. The method of claim 3 , wherein said porous semiconductor substrate forms two or more discrete areas on said support structure.

6. The method of claim 3 , wherein said support structure is a solid-phase composition comprising silicon or an oxide thereof, a glass, an organic and inorganic polymer, a metal or semimetal, a ceramic, or a combination thereof.

7. The method of claim 6 , wherein said support structure is silicon, oxidized silicon, or a combination thereof.

8. The method of claim 3 , wherein said support structure is substantially planar or particulate.

9. The method of claim 8 , wherein said particulate support structure is affixed to a second support structure.

10. The method of claim 9 , wherein said second support structure is a solid-phase composition comprising silicon or an oxide thereof, a glass, an organic and inorganic polymer, a metal or semimetal, a ceramic, or a combination thereof.

11. The method of claim 1 , wherein said porous semiconductor substrate absorbs light.

12. The method of claim 1 , wherein said porous semiconductor substrate is a porous light-absorbing semiconductor substrate.

13. The method of claim 1 , wherein said porous semiconductor substrate is microporous, macroporous, or mesoporous.

14. The method of claim 1 , wherein the porosity of said porous semiconductor substrate is about 4% to about 100%.

15. A method for detecting an analyte contained in a gas comprising:

(a) providing a porous light-absorbing semiconductor substrate;

(b) directing a gas comprising an analyte onto said semiconductor substrate for a period of time sufficient for an analyte contained in said gas to be adsorbed onto said semiconductor substrate; and

(c) analyzing said analyte by laser desorption/ionization.

16. A method for analyzing a physical property of an analyte comprising:

(a) obtaining a porous light-absorbing semiconductor substrate;

(b) contacting a quantity of a gas containing an analyte having a physical property to be determined with said semiconductor substrate to form an analyte-loaded semiconductor substrate, wherein said analyte is adsorbed directly from the gas; and

(c) irradiating said analyte-loaded semiconductor substrate to produce an ionized analyte or a product resulting from the chemical reaction thereof.

17. A method for providing an analyte ion suitable for analysis of a physical property thereof comprising:

(a) providing a porous light-absorbing semiconductor substrate having a multiplicity of saturated carbon atoms covalently bonded to the semiconductor substrate;

(b) contacting a quantity of a gas containing an analyte having a physical property to be determined with said semiconductor substrate to form an analyte-loaded semiconductor substrate;

(c) placing the analyte loaded-semiconductor substrate under reduced pressure;

(d) irradiating said analyte-loaded semiconductor substrate with an ultraviolet laser under reduced pressure to provide an ionized analyte that is suitable for analysis to determine a desired physical property.

18. A method for identifying an analyte ion, the method comprising:

(a) providing a porous, light-absorbing, silicon semiconductor substrate with a porosity of about 60% to about 70% with ethyl phenyl groups bonded thereto;

(b) contacting a quantity of a gas containing an analyte having a mass to be analyzed with said semiconductor substrate to form an analyte-loaded semiconductor substrate, wherein said gas is free of matrix molecules;

(c) applying a positive voltage of about ±5,000 to about ±34,000 volts to said analyte-loaded semiconductor substrate;

(d) irradiating said analyte-loaded semiconductor substrate under reduced pressure with an ultraviolet laser to provide an ionized analyte; and

(c) analyzing the mass to charge ratio of the ionized analyte by time-of-flight mass spectrometry techniques.

19. A device for active sampling of a gas and directing the same gas onto a porous light-absorbing semiconductor substrate comprising:

(a) a gas conduit having an inlet end and an outlet end;

(b) a nozzle having an inlet end and an outlet end, wherein said conduit outlet end and said nozzle inlet end are fluidly connected, wherein said nozzle is capable of directing a gas from said conduit outlet end, through said nozzle, and onto a porous light-absorbing semiconductor substrate; and

(c) a pump for introducing said gas through said conduit inlet end and moving said gas through said nozzle outlet end.

20. A device for passive sampling of a gas comprising:

(a) an upper cover having a plurality of parallel walls projecting downwardly from the upper cover that form a series of channels;

(b) a lower plate having a plurality of parallel walls projecting upwardly from the lower plate that form a series of channels; and

(c) a surface of porous light-absorbing semiconductor substrate located at a distal end of said lower plate, wherein said surface faces the upper cover;

wherein said upper plate and said lower plate are spaced apart form each other such that the respective parallel walls interdigitate, thereby creating a series of baffles that allow gas to flow to the distal end of the lower plate and contact said surface, optionally with a protective cover that does not substantially inhibit gas flow.