Stacked switchable element and diode combination with a low breakdown switchable element

1. A device comprising:

a semiconductor diode; and

a switchable element comprising a metal layer, wherein the switchable element is positioned in stacked adjacent relationship to the semiconductor diode, wherein the semiconductor diode and the switchable element are electrically connected in series with one another, wherein the switchable element is configured to be switchable from a low conductance state to a high conductance state in response to the application of a low-density forming current.

2. The device of claim 1 , wherein the switchable element comprises an intermediate layer of dielectric material adjacent to the metal layer.

3. The device of claim 2 , wherein the intermediate layer comprises about 100 nm to about 2 μm of SiO x .

4. The device of claim 2 , wherein the intermediate layer comprises about 300 Å of MgF 2 .

5. The device of claim 2 , wherein the intermediate layer comprises between about 100 to 200 Å of silicon-rich SiN.

6. The device of claim 2 , wherein the intermediate layer comprises about 350 Å of microcrystal silicon.

7. The device according to claim 1 , further comprising a stop layer between the switchable element and the semiconductor diode.

8. The device according to claim 1 , wherein the switchable element is configured to function as an anti-fuse.

9. A device comprising:

a semiconductor diode; and

a switchable element comprising a metal layer, wherein the switchable element is positioned in stacked adjacent relationship to the semiconductor diode, wherein the semiconductor diode and the switchable element are electrically connected in series with one another, wherein the switchable element is configured to be switchable from a low-conductance state to a high-conductance state in response to the application of a low-voltage.

10. The device of claim 9 , wherein the switchable element comprises an intermediate layer of dielectric material adjacent to the metal layer.

11. The device of claim 10 , wherein the intermediate layer comprises about 100 nm to about 2 μm of SiO x .

12. The device of claim 10 , wherein the intermediate layer comprises about 300 Å of MgF 2 .

13. The device of claim 10 , wherein the intermediate layer comprises between about 100 to 200 Å of silicon-rich SiN.

14. The device of claim 10 , wherein the intermediate layer comprises about 350 Å of microcrystal silicon.

15. The device according to claim 9 , further comprising a stop layer between the switchable element and the semiconductor diode.

16. The device according to claim 9 , wherein the switchable element is configured to function as an anti-fuse.

17. A monolithic, stacked switchable element and diode device comprising:

a thin-film diode comprising a p type layer, an intrinsic or lightly doped layer, and a highly doped n + type layer;

a switchable element comprising a metal layer and an intermediate layer, wherein the intermediate layer of the switchable element is adjacent and substantially contiguous with the p type layer of the thin-film diode, wherein the thin-film diode and the switchable element are in a stacked physical arrangement and are electrically in series, wherein the switchable element is configured to be switchable from a low-conductance state to a high-conductance state in response to the application of a low-voltage or a low-density forming current; and

an electrical contact adjacent and substantially contiguous with the n + type layer of the thin-film diode.

18. The monolithic, stacked switchable element and diode device according to claim 17 , wherein the thin-film diode comprises microcrystalline silicon or hydrogenated amorphous silicon (a-Si:H).

19. The monolithic, stacked switchable element and diode device according to claim 17 , further comprising a stop layer between the intermediate layer of the switchable element and the p type layer of the thin-film diode, wherein the stop layer is configured to prevent the thin-film diode from being shorted during the application of a forming current to the switchable element.

20. The monolithic, stacked switchable element and diode device according to claim 17 , wherein the metal layer of the switchable element comprises Ag or V.