Structure for a semiconductor arrangement and a method of manufacturing a semiconductor arrangement
View Patent ↗The invention relates to a structure for a semiconductor arrangement. A resist structure for supporting deposition of a solution containing a semiconductor is directly or through intervening layers coupled to a substrate. The resist structure comprises a depression ( 301 ) for depositing of the solution containing the semiconductor ( 309 ) and a trough ( 305 ) aligning at least part of an edge of the depression ( 309 ) and separated from the depression ( 309 ) by a protrusion ( 307 ). The trough ( 305 ) preferably surrounds the depression ( 309 ). The trough provides a pinning effect on the solution containing the semiconductor thereby improving the wettability and accordingly allowing for increased volume of semiconductor to be applied to a given area.
1. A structure for a semiconductor arrangement; comprising a resist structure coupled to a substrate; the resist structure comprising:
a depression for depositing of a solution containing a semiconductor or a precursor thereof and
a trough aligning at least part of an edge of the depression and separated from the depression by a protrusion.
2. A structure as claimed in claim 1 wherein the resist structure is formed in a single layer of the semiconductor arrangement.
3. A structure as claimed in claim 1 wherein the trough substantially surrounds the depression.
4. A structure as claimed in claim 1 wherein the semiconductor is an organic semiconductor.
5. A structure as claimed in claim 1 wherein a width of an end of the protrusion distal from the substrate is larger than a width of an end of the protrusion proximal to the substrate.
6. A structure as claimed in claim 1 wherein a width of an end of the protrusion proximal to the substrate is larger than a width of an end of the protrusion distal from the substrate.
7. A structure as claimed in claim 5 , wherein the protrusion has a substantially frusto-conical cross section.
8. A structure as claimed in claim 1 wherein the resist structure is formed by a polymer layer.
9. A structure as claimed in claim 1 wherein a cross section of the depression substantially perpendicular to the direction of depression comprises rounded corners.
10. A structure as claimed in claim 1 wherein a cross section of the depression substantially perpendicular to the direction of depression is substantially rectangular.
11. A structure as claimed in claim 1 wherein a depth of the trough is substantially the same as a depth of the depression.
12. A structure as claimed in claim 1 wherein the depression comprises a semiconductor forming an active layer of a field effect transistor.
13. A structure as claimed in claim 12 wherein the field effect transistor comprises a source and drain having a plurality of interdigitated electrodes and a gate extending across the plurality of interdigitated electrodes.
14. A structure as claimed in claim 13 wherein the depression extends beyond the gate in a direction substantially perpendicular to the longitudinal direction of the interdigitated fingers.
15. A structure as claimed in claim 14 wherein the depression does not extend beyond the gate in a direction substantially aligned with the longitudinal direction of the interdigitated fingers.
16. An electronic device comprising the resist structure of claim 1 .
17. An electronic device, comprising a resist structure coupled to a substrate; the resist structure comprising:
a depression for depositing of a solution containing a semiconductor or a precursor thereof and
a trough aligning at least part of an edge of the depression and separated from the depression by a protrusion,
wherein the depression comprises a semiconductor forming an active layer of a field effect transistor.
18. An electronic device comprising a resist structure coupled to a substrate; the resist structure comprising:
a depression for depositing of a solution containing a semiconductor or a precursor thereof and
a trough aligning at least part of an edge of the depression and separated from the depression by a protrusion, provided with
an active matrix backplane or active matrix display comprising,
a structure for a semiconductor arrangement; comprising a resist structure coupled to a substrate; the resist structure comprising:
a depression for depositing of a solution containing a semiconductor or a precursor thereof and
a trough aligning at least part of an edge of the depression and separated from the depression by a protrusion,
wherein the depression comprises a semiconductor forming an active layer of a field effect transistor.
19. An electroluminescent device comprising the structure of claim 12 .
20. A method of manufacturing a semiconductor arrangement; the method comprising the steps of:
providing a substrate;
applying a resist structure coupled to the substrate; the resist structure comprising a depression for depositing of a solution containing a semiconductor or a precursor thereof and a trough aligning at least part of an edge of the depression and separated from the depression by a protrusion; and
depositing the solution containing the semiconductor in the depression.
21. A method as claimed in claim 20 wherein the depositing of the solution is by a printing process.
22. A method as claimed in claim 21 wherein the depositing of the solution is by an ink jet printing process.