Output power detection circuit
A detection circuit for detecting the output power of a power amplifier comprises a first current minor transistor (Ti 1 ) having a base, which is connectable to a power transistor (T 10 ), and a collector, a RF detection means (RF-det) for detecting the RF current flowing through the current mirror transistor (T 11 ). Said RF detection means (RFdet) is connected to the collector of said first current mirror transistor (T 11 ). Said detection circuit further comprises a biasing means (bias-RF-det) for biasing said RF detection means (RF-det), wherein said biasing means is connected to said collector of said first current mirror (T 11 ) and said RF detection means (RF-det).
1. Detection circuit for detecting the output power of a power amplifier, comprising:
a first current mirror transistor (T 11 ) having a base, which is connectable to a power transistor (T 10 ), and a collector;
a RF detection means (RF-det) for detecting the RF current flowing through the current mirror transistor (T 11 ), wherein said RF detection means (RF-det) is connected to the collector of said first current mirror transistor (T 11 ), and
a biasing means (bias-RE-det) for biasing said RF detection means (RE-det), wherein said biasing means is connected to said collector of said first current mirror (T 11 ) and said RF detection means (RF-det).
2. Detection circuit according to claim 1 , further comprising a DC detector (DC-det) for detecting the DC components of the current flowing through said first current mirror transistor (T 11 ), wherein said DC detector (DC-det) is connected to said collector of said first current mirror transistor (T 11 ).
3. Detection circuit according to claim 1 , further comprising:
a second current mirror transistor (T 12 ) having a base which is connectable to a power transistor (T 10 ), and
a DC detector (DC-det) for detecting the DC components of the current flowing through said second current mirror transistor (T 12 ), wherein said DC detector (DC-det) is connected to said collector of said second current mirror transistor (T 11 ).
4. Detection circuit according to claim 3 , further comprising a RF isolation means (L) connected between the first and second current mirror transistor (T 11 , T 12 ).
5. Detection circuit according to claim 3 4 , wherein the detection circuit is implemented on the same chip.