IP Library Granted Patent US 8,262,869
Granted Patent B2
US 8,262,869 · App. 10/563,864 · Granted Sep 11, 2012

Work piece processing by pulsed electric discharges in solid-gas plasma

Assignee: Chemfilt Ionsputtering Aktiebolag
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Quick Facts
Patent No.
US 8,262,869
App. No.
10/563,864
Granted
Sep 11, 2012
Kind
B2
Abstract

Work piece processing is performed by pulsed discharges between an anode ( 2 ) and a magnetron sputtering cathode ( 1 ) in solid-gas plasmas using a chamber ( 2 ) containing the work piece ( 7 ). A system ( 12 ) maintains a vacuum in the chamber and another system ( 14 ) provides sputtering and reactive gases. The pulses are produced in a plasma pulser circuit including the anode and the cathode, the discharges creating gas and partially ionized solid plasma blobs ( 3 ) moving or spreading from a region at a surface of the cathode towards the work piece and the anode. A potential is applied to the work piece so that a pulsed current comprising biasing pulses arises between the second electrodes. In particular biasing discharges are produced between the anode and the work piece when said plasma blobs have spread to regions at the anode and at the work piece so that the pulsed current is the current of these biasing discharges. The method is efficient for processing or modifying surface regions of work pieces of various kinds and configurations and can be employed for achieving efficient work piece etching, interface mixing, surface and balk diffusion, gas absorption and desorption, initial and further stages of thin film condensation, and for performing ion plating.

Claims (34)

1. A method of processing a work piece by pulsed electric discharges in metal-gas plasmas comprising the steps of:

providing a vacuum in a processing chamber,

providing sputtering and reactive gases in the processing chamber,

producing pulsed discharges with a duty cycle of 1*10 −7 % to 10% in gas and vapor located between first electrodes including an anode and a magnetron sputtering cathode for creating plasma blobs of ionized gas and partially ionized metal plasma by providing a pulsed current to the first electrodes from a first pulse generator, the plasma blobs moving or spreading from a region at a surface of the magnetron sputtering cathode towards second electrodes including the work piece and the anode, and

applying a potential to the work piece from a second pulse generator including a DC power supply for charging a capacitor,

wherein the potential is applied to the work piece in such a way that a pulsed current comprising biasing pulses arises between the second electrodes, the biasing pulses being produced from a charge of the capacitor, the biasing pulses of the pulsed current between the second electrodes having or appearing with the same frequency as the pulsed discharges.

2. The method according to claim 1 , wherein the potential is applied to the work piece so that biasing discharges are produced between the anode and the work piece when said plasma blobs have spread to regions at the anode and at the work piece, the pulsed current comprising the biasing pulses being the current of the biasing discharges.

3. The method according to claim 1 , wherein the potential is applied to the work piece in such a way that the biasing pulses coincide in time with pulses to create the pulsed discharges between the first electrodes.

4. The method according to claim 1 , wherein the potential is applied to the work piece in such a way that the biasing pulses exist as long as a plasma exists.

5. The method according to claim 1 , wherein the potential is applied to the work piece in such a way that the biasing pulses start simultaneously with the pulsed discharges between the first electrodes in which plasmas are created and are terminated after the end of the decay of the plasmas created.

6. The method according to claim 1 , wherein said pulsed discharges are provided by a first high current pulse supply and said biasing pulses are provided by a second high current pulse supply.

7. The method according to claim 1 , wherein the magnetron sputtering cathode and the work piece are connected to the negative pole of different high current pulse supplies.

8. The method according to claim 1 , wherein said frequency of said biasing pulses and said pulsed current is 20 Hz-20 kHz.

9. The method according to claim 1 , wherein a biasing current of the biasing pulses has a magnitude that is at least 10% of a magnitude of a magnetron discharge current of the pulsed discharges.

10. The method according to claim 1 , characterized in that said biasing pulses and said pulsed discharges are synchronized.

11. The method according to claim 1 , characterized in that said pulsed discharges are produced by a pulse generator including a capacitor acting as accumulator for an electric charge, where energy stored in said capacitor is used to produce said discharges.

12. A method of processing a work piece by pulsed electric discharges in metal-gas plasmas comprising the steps of:

providing a vacuum in a processing chamber,

providing sputtering and reactive gases in the processing chamber,

producing pulsed discharges in gas and vapor between first electrodes including an anode and a magnetron sputtering cathode for creating a plasma by providing a pulsed current to said first electrodes from a first pulse generator, wherein said pulsed discharges have a duty cycle of 1*10 −7 %-10%,

applying a potential from a second pulse generator including a DC power supply for charging a capacitor to the work piece in such a way that a pulsed current comprising biasing pulses arises between second electrodes including the work piece and the anode,

the biasing pulses being produced from a charge of said capacitor, the biasing pulses of the pulsed current between the second electrodes having or appearing with the same frequency as the pulsed discharges.

13. The method according to claim 12 , wherein the pulsed discharges are provided by a first high current pulse supply and said biasing pulses are provided by a second high current pulse supply.

14. The method according to claim 12 , wherein the magnetron sputtering cathode and the work piece are connected to the negative pole of different high current pulse supplies.

15. The method according to claim 12 , wherein said frequency of said biasing pulses and said pulsed current is 20 Hz-20 kHz.

16. The method according to claim 12 , wherein a biasing current of the biasing pulses has a magnitude that is at least 10% of a magnitude of a magnetron discharge current of said pulsed discharges.

17. The method according to claim 12 , wherein the biasing pulses and the pulsed discharges are synchronized.

18. The method according to claim 12 , wherein the pulsed discharges are produced by a pulse generator including a capacitor acting as accumulator for an electric charge, and wherein energy stored in the capacitor is used to produce the discharges.

19. The method according to claim 1 , wherein a biasing switch is provided between the second pulse generator and the work piece, and wherein the biasing switch is opened if the magnitude of the pulsed current between the second electrodes is above a predetermined threshold.

20. The method according to claim 19 , wherein the biasing switch is an arc suppression component, which opens if a concentrated or diffused arc forms between the work piece and the anode.

21. The method according to claim 19 , wherein the biasing switch is a solid state switch.

22. The method according to claim 12 , wherein a biasing switch is provided between the second pulse generator and the work piece, and wherein the biasing switch is opened if the magnitude of the pulsed current between the second electrodes is above a predetermined threshold.

23. The method according to claim 22 , wherein the biasing switch is an arc suppression component, which opens if a concentrated or diffused arc forms between the work piece and the anode.

24. The method according to claim 22 , wherein the biasing switch is a solid state switch.

Assignments (6)
CHANGE OF NAME Recorded Oct 7, 2010
From: CHEMFILT R & D AKTIEBOLAG
To: CHEMFILT IONSPUTTERING AKTIEBOLAG
Reel/Frame 025105/0194 →
APPOINTMENT OF TRUSTEE IN BANKRUPTCY FOR CONVEYING PARTY, CEMECON AG, IN GERMAN WITH ENGLISH TRANSLATION Recorded Oct 7, 2010
From: CEMECON AG
To: GEORG, THOMAS
Reel/Frame 025105/0290 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 7, 2010
From: CHEMFILT IONSPUTTERING AKTIEBOLAG, BY RUNE BRANNSTOM, TRUSTEE IN BANKRUPTCY
To: CEMECON AG
Reel/Frame 025105/0384 →
CONFIRMATORY ASSIGNMENT Recorded Oct 7, 2010
From: CHEMFILT IONSPUTTERING AKTIEBOLAG, BY RUNE BRANNSTOM, TRUSTEE IN BANKRUPTCY
To: CEMECON AG, BY THOMAS GEORG, TRUSTEE IN BANKRUPTCY
Reel/Frame 025105/0411 →
APPOINTMENT OF TRUSTEE IN BANKRUPTCY FOR CONVEYING PARTY, CHEMFILT IONSPUTTERING AKTIEBOLAG, IN SWEDISH WITH ENGLISH TRANSLATION Recorded Oct 7, 2010
From: CHEMFILT IONSPUTTERING AKTIEBOLAG
To: BRANNSTOM, RUNE
Reel/Frame 025126/0300 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 8, 2006
From: KOUZNETSOV, VLADIMIR
To: CHEMFIT IONSPUTTERING AKTIEBOLAG
Reel/Frame 017994/0460 →
Priority Claims (1)
SE 0302045 · Jul 10, 2003 · national
Continuity (1)
Related Publication 20060278518A1 · Dec 14, 2006