Semiconductor light-emitting device and its manufacturing method
View Patent ↗In a light-emitting device and its manufacturing method, mounting by batch process with surface-mount technology, high light extraction efficiency, and low manufacturing cost are realized. The light-emitting device 1 comprises semiconductor layers ( 2, 3 ) of p-type and n-type nitride semiconductor, semiconductor-surface-electrodes ( 21, 31 ) to apply currents into each of the semiconductor layers ( 2, 3 ), an insulating layer 4 which holds the semiconductor layers ( 2, 3 ), and mount-surface-electrodes ( 5 ). The semiconductor layers ( 2 ) has a non-deposited area 20 where the other semiconductor layer ( 3 ) is not deposited. The insulating layer ( 4 ) has VIA 10 which electrically connect the mount-surface-electrodes 5 and the semiconductor-surface-electrodes ( 21, 31 ). In the manufacturing process, firstly. semiconductor layers ( 2, 3 ) and semiconductor-surface-electrodes ( 21, 31 ) are deposited on the transparent crystal substrate, and by using build-up process, insulating layer ( 4 ) and the mount-surface-electrodes ( 5 ) are formed, and secondly, VIA 10 are formed. and finally, the transparent crystal substrate is separated to get light-emitting device ( 1 ). Light can be extracted directly and efficiently from the semiconductor layers ( 2, 3 ). With the mount-surface-electrodes ( 21, 31 ), light-emitting device ( 1 ) can be mounted by using surface mount technology.
1. A light-emitting device formed by depositing p-type and n-type nitride semiconductor layers, comprising:
deposited p-type and n-type nitride semiconductor layers;
semiconductor-surface-electrodes to apply currents into each of the semiconductor layers;
an insulating layer which holds the semiconductor layers, said insulating layer comprising two surfaces; and
mount-surface-electrodes being structured and arranged to mount the light-emitting device onto a mounting substrate by using solder, the mount-surface-electrodes being provided on one surface of the insulating layer which is opposite to the other surface of the insulating layer where the semiconductor-surface-electrodes are made;
wherein one of the semiconductor layers has a non-deposited area where the other semiconductor layer is not deposited;
one of the semiconductor-surface-electrodes is built up on the surface of the non-deposited area;
vias are made in via holes in the insulating layer which electrically and directly connect the semiconductor-surface-electrodes and the mount-surface-electrodes, the via holes are filled with solder or electric conductive paste;
the semiconductor-surface-electrodes, the insulating layer, and the mount-surface-electrodes are built up in this order on one side of the deposited semiconductor layers; and
a surface of the other side of the deposited semiconductor layers is a light emitting surface which emits light beams directly to outside from the semiconductor layers.
2. The light-emitting device of claim 1 , wherein the insulating layer is made of one of resin, ceramics, or silicon.
3. The light-emitting device of claim 1 , wherein phosphor is provided on a surface or in an interior portion of the semiconductor layer.