Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
View Patent ↗An LED array chip ( 2 ), which is one type of a semiconductor light emitting device, includes an array of LEDs ( 6 ), a base substrate ( 4 ) supporting the array of the LEDs ( 6 ), and a phosphor film ( 48 ). The array of LEDs ( 6 ) is formed by dividing a multilayer epitaxial structure including a light emitting layer into a plurality of portions. The phosphor film ( 48 ) covers an upper surface of the array of the LEDs ( 6 ) and a part of every side surface of the array of LEDs ( 6 ). Here, the part extends from the upper surface to the light emitting layer.
1. A semiconductor light emitting device comprising:
a base substrate made of a highly heat-conductive material; and
a pair of power supply terminal thin-film layers, each being provided on different areas of a first main surface of the base substrate, and the pair of power supply terminal thin-film layers being electrically connected to each other via first and second through holes provided in the base substrate, wherein
a second main surface of the base substrate has provided thereon a semiconductor multilayer epitaxial structure including a first conductive layer, a light emitting layer, and a second conductive layer formed in the stated order,
the multilayer epitaxial structure is mounted on the base substrate in such a manner that a last epitaxially-grown layer having a structure characteristic of being grown on a single-crystal substrate different from the base substrate is positioned closer to the base substrate than a portion of a first epitaxially-grown layer,
a first electrode thin-film layer is in contact with the first conductive layer,
a second electrode thin-film layer is in contact with the second conductive layer,
a phosphor film covers the semiconductor multilayer epitaxial structure, and
a first thin-film layer and a second thin-film layer electrically connect the first electrode thin-film layer and the second electrode thin-film layer respectively via the through-holes,
wherein the base substrate is made of one of SiC, AlN, GaN, BN, Si, and sapphire.
2. The semiconductor light emitting device of claim 1 , wherein
the multilayer epitaxial structure is formed on the base substrate leaving a space along each edge of the second main surface of the base substrate which faces the multilayer epitaxial structure; and
the first through hole and the second through hole are provided in a peripheral portion of the base substrate, the peripheral portion corresponding to the space.
3. The semiconductor light emitting device of claim 1 , further comprising:
a metal reflective film that is sandwiched between the multilayer epitaxial structure and the base substrate.
4. The semiconductor light emitting device of claim 1 , wherein
the first and the second through holes are positioned in a periphery of the base substrate, and
the multilayer epitaxial structure is not positioned on or over the first and second through holes.
5. The semiconductor light emitting device of claim 1 , wherein
the phosphor layer covers an entirety of the base substrate, including surrounding edge portions of the base substrate, and
a peripheral lateral surface of the base substrate and a peripheral lateral surface of the phosphor layer are a continuous surface.
6. A semiconductor light emitting device comprising:
a base substrate made of a highly heat-conductive material; and
a pair of power supply terminal thin-film layers, each being provided on different areas of a first main surface of the base substrate, and the pair of power supply terminal thin-film layers being electrically connected to each other via first and second through holes provided in the base substrate, wherein
a second main surface of the base substrate has provided thereon a semiconductor multilayer epitaxial structure including a first conductive layer, a light emitting layer, and a second conductive layer formed in the stated order,
the multilayer epitaxial structure is mounted on the base substrate in such a manner that a last epitaxially-grown layer having a structure characteristic of being grown on a single-crystal substrate different from the base substrate is positioned closer to the base substrate than a portion of a first epitaxially-grown layer,
a first electrode thin-film layer is in contact with the first conductive layer,
a second electrode thin-film layer is in contact with the second conductive layer,
a phosphor film covers the semiconductor multilayer epitaxial structure, and
a first thin-film layer and a second thin-film layer electrically connect the first electrode thin-film layer and the second electrode thin-film layer respectively via the through-holes,
wherein the base substrate is made of a highly-resistive semiconductor material.
7. The semiconductor light emitting device of claim 6 , wherein
the multilayer epitaxial structure is formed on the base substrate leaving a space along each edge of a the second main surface of the base substrate which faces the multilayer epitaxial structure; and
the first through hole and the second through hole are provided in a peripheral portion of the base substrate, the peripheral portion corresponding to the space.
8. The semiconductor light emitting device of claim 6 , further comprising:
a metal reflective film that is sandwiched between the multilayer epitaxial structure and the base substrate.
9. The semiconductor light emitting device of claim 6 , wherein
the first and the second through holes are positioned in a periphery of the base substrate, and
the multilayer epitaxial structure is not positioned on or over the first and second through holes.
10. The semiconductor light emitting device of claim 6 , wherein
the phosphor layer covers an entirety of the base substrate, including surrounding edge portions of the base substrate, and
a peripheral lateral surface of the base substrate and a peripheral lateral surface of the phosphor layer are a continuous surface.