Electric device comprising an LDMOS transistor

1. An electronic device comprising a transistor provided at a surface of a semiconductor substrate, the transistor having a source and a drain that are mutually connected through a channel, which transistor is further provided with a gate electrode for influencing an electron distribution in the channel and with a shield present between the gate and the drain, which drain is provided with a drain extension extending in the substrate towards the channel, the drain having a contact, said drain contact and said gate being mutually separated through an extension area, wherein the shield has a stepped structure in the extension area, the shield including an inverse L-shaped section and a z-shaped section, a top end of the z-shaped section being connected to a bottom end of the inverse L-shaped section.

2. An electronic device as claimed in claim 1 , wherein a L-shaped spacer is present between the gate-electrode and the shield.

3. An electronic device as claimed in claim 1 , wherein the shield is formed as a metal silicide.

4. An electronic device as claimed in claim 1 , wherein the drain extension is provided with a first and a second region, the first region having interfaces with the channel and the second region, the second region having an interface with a contact area within the drain, which first region has a higher dopant concentration than the second region, and wherein the first region is present within a shield area defined by a perpendicular projection of the shield on the substrate.

5. An electronic device as claimed in claim 4 , wherein the interface between the first and the second region is present within the shield area.

6. An electronic device as claimed in claim 4 , wherein a ratio of the dopant concentrations in the first and the second region is in the range of 1.2 to 2.5.

7. An electronic device as claimed in claim 1 , wherein the semiconductor substrate is made of silicon and the transistor is of the LDMOS type.