Organic electronic devices
An electronic device including at least first and second transistors integrated together on a substrate and each including an organic semiconductor region, wherein the first and second transistors are either both n-type or both p-type but wherein one of the first and second transistors is a normally-ON transistor and the other of the first and second transistors is a normally-OFF transistor.
1. An electronic device including at least first and second transistors integrated together on a substrate and each including an organic semiconductor region,
wherein the first and second transistors are both p-type but wherein one of the first and second transistors is a normally-ON transistor and the other of the first and second transistors is a normally-OFF transistor, and wherein each transistor comprises a semiconductor region coupled to a gate electrode via a dielectric region, and the dielectric regions of the two transistors are different from each other in terms of at least one property thereof;
wherein the dielectric regions have different chemical compositions; and
wherein said dielectric region of said normally ON-transistor contains an electron withdrawing group.
2. The device according to claim 1 , wherein said electron withdrawing group is a fluorine, chlorine, bromine, hydroxyl or cyano-containing group.
3. The device according to claim 1 , wherein, the dielectric regions comprise different organic materials.
4. The device according to claim 1 , wherein the electron-withdrawing group stabilises the formation of a hole accumulation layer at an interface between the organic semiconductor region of said normally-ON transistor and the dielectric region of said normally-ON transistor.
5. An electronic device including at least first and second transistors integrated together on a substrate and each including an organic semiconductor region,
wherein the first and second transistors are both n-type but wherein one of the first and second transistors is a normally-ON transistor and the other of the first and second transistors is a normally-OFF transistor, and wherein each transistor comprises a semiconductor region coupled to a gate electrode via a dielectric region, and the dielectric regions of the two transistors are different from each other in terms of at least one property thereof;
wherein the dielectric regions have a different chemical compositions; and
wherein said dielectric region of said normally ON-transistor contains an electron donating group.
6. The device according to claim 5 , wherein said electron donating group comprises a metal atom, such as an alkali atom.
7. The device according to claim 5 , wherein the dielectric regions comprise different organic materials.