Method for producing a light emitting device

1. A production method for producing a light-emitting device in which a light-emitting layer at least including an n-type semiconductor layer and a p-type semiconductor layer is layered on a transparent crystal substrate, comprising:

applying a silicon organic solution to at least a part of the transparent crystal substrate or the light-emitting layer to form a transfer layer on at least a part of the transparent crystal substrate or the light-emitting layer wherein said transfer layer is 1 to 2 μm;

softening or setting said transfer layer upon supplying an energy thereto;

pressing a mold formed with a minute unevenness structure against the transfer layer to transfer the minute unevenness structure to an outer surface of the transfer layer under a pressure of 5 MPa or higher and 150 MPa or lower wherein a pitch is 1 to 3 μm,

wherein the mold has an upper flat portion located near a bottom of the minute unevenness structure to be transferred and a lower flat portion located at a position about a thickness of an upper semiconductor layer of the light-emitting layer, the upper flat portion and the lower flat portion are transferred together with the minute unevenness structure to the transfer layer; and forming electrode-forming portions by etching the upper and lower semiconductor layers of the light-emitting layer when dry etching is carried out using the transfer layer as a resist mask; and

dry etching the transfer layer with a chlorine gas using the transfer layer as a resist mask to form a minute unevenness structure for preventing multiple reflection in the transparent crystal substrate or the light-emitting layer.

2. A production method according to claim 1 , wherein forming the minute unevenness structure in the light-emitting layer includes separating the transparent crystal substrate from the light-emitting layer after a substrate bearing layer is formed on a surface of the light-emitting layer where electrodes are to be formed.

3. A production method according to claim 2 , wherein the etching comprises adjusting a selection ratio of the etching speed of the light-emitting layer to that of the resist from twofold to fourfold.

4. A production method according to claim 3 , wherein applying the silicon organic solvent to form the transfer layer comprises applying the silicon organic solvent by potting or spray coating.

5. A production method according to claim 4 , comprising forming an unevenness structure larger than the minute unevenness structure on the minute unevenness structure of the light-emitting layer after forming the minute unevenness structure for preventing the multiple reflection in the light-emitting layer.

6. A production method according to claim 5 , wherein the unevenness structure has the shape of a prism or microlens.

7. A production method according to claim 1 , wherein the etching comprises adjusting a selection ratio of the etching speed of the light-emitting layer to that of the resist from twofold to fourfold.

8. A production method according to claim 1 , comprising forming an unevenness structure larger than the minute unevenness structure on the minute unevenness structure of the light-emitting layer after forming the minute unevenness structure for preventing the multiple reflection in the light-emitting layer.

9. A production method according to claim 1 , wherein applying the silicon organic solvent to form the transfer layer comprises applying the silicon organic solvent by potting or spray coating.

10. A production method according to claim 1 , wherein the silicon organic solvent comprises:

an alcohol, an ester, a ketone or a mixture of two or more of an alcohol, an ester, and a ketone, and

a silicon alkoxide component, R n Si(OH) 4-n , where R is H or alky group, and n is an integer of 0 to 3.

11. A production method according to claim 10 , wherein the silicon organic solvent contains TEOS or TMOS.

12. A production method according to claim 1 , wherein the method further comprises post-baking the transfer layer at or below 120° C. after the minute unevenness structure is transferred to the transfer layer.