IP Library Granted Patent US 7,537,710
Granted Patent B2
US 7,537,710 · App. 10/576,946 · Granted May 26, 2009

Method for producing nitridosilicate-based compound, nitridosilicate phosphor, and light-emitting apparatus using the nitridosilicate phosphor

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Quick Facts
Patent No.
US 7,537,710
App. No.
10/576,946
Granted
May 26, 2009
Kind
B2
Abstract

A nitridosilicate-based compound is produced by reacting an alkaline-earth metal compound capable of generating an alkaline-earth metal oxide by heating or a rare earth compound capable of generating a rare earth oxide by heating with at least a silicon compound, while the alkaline-earth metal compound or the rare earth compound is being reduced and nitrided by the reaction with carbon in an atmosphere of nitriding gas. Because of this, a nitridosilicate-based compound of high quality can be produced industrially at low cost.

Claims (26)

1. A method for producing a nitridosilicate-based compound, comprising reacting

a material containing an alkaline-earth metal compound capable of generating an alkaline-earth metal oxide MO by heating, where M is at least one element selected from Mg, Ca, Sr, and Ba; and O is oxygen,

a silicon compound, and

carbon

in an atmosphere of nitriding gas,

wherein the nitridosilicate-based compound is not a SIALON compound represented by a general formula: M p/2 Si 12−p−q Al p+q O q N 16−q (where M is Ca or Ca combined with Sr; q is 0 to 2.5; and p is 1.5 to 3), and

the reaction is performed by heating.

2. The method for producing a nitridosilicate-based compound according to claim 1 , wherein the alkaline-earth metal compound is at least one compound selected from a carbonate, an oxalate, an oxide, and a hydride of alkaline-earth metal.

3. The method for producing a nitridosilicate-based compound according to claim 1 , wherein the silicon compound is at least one compound selected from silicon nitride and silicon diimide.

4. The method for producing a nitridosilicate-based compound according to claim 1 , wherein the nitriding gas is at least one gas selected from nitrogen gas and ammonia gas.

5. The method for producing a nitridosilicate-based compound according to claim 1 , wherein the carbon is solid-state carbon.

6. The method for producing a nitridosilicate-based compound according to claim 1 , wherein a nitridosilicate-based compound is produced in which the number of atoms of oxygen is smaller than that of alkaline-earth metal per mol of nitridosilicate-based compound.

7. The method for producing a nitridosilicate-based compound according to claim 1 , wherein a compound represented by a general formula: M 2 Si 5 N 8 , where M is at least one element selected from Mg, Ca, Sr, and Ba, is produced.

8. The method for producing a nitridosilicate-based compound according to claim 1 , wherein the nitridosilicate-based compound is a nitridosilicate-based phosphor.

9. The method for producing a nitridosilicate-based compound according to claim 8 , wherein the nitridosilicate-based phosphor is represented by a general formula selected from M 2 Si 5 N 8 :Eu 2+ , M 2 Si 4 AlON 7 :Eu 2+ , MSiN 2 :Eu 7+ , and M 2 Si 5 N 8 :Ce 3+ , where M is at least one element selected from Mg, Ca, Sr, and Ba.

10. The method for producing a nitridosilicate-based compound according to claim 8 , wherein the nitriding gas is mixed gas of nitrogen and hydrogen.

11. A nitridosilicate phosphor comprising a nitridosilicate compound represented by a general formula: MSiN 2 as a phosphor base material, and Eu 2+ ions as a luminescent center,

wherein a main component of the M is Ba.

12. A light-emitting apparatus using, as a light-emitting source, a nitridosilicate phosphor comprising a nitridosilicate compound represented by a general formula: MSiN 2 as a phosphor base material, and Eu 2+ ions as a luminescent center,

wherein a main component of the M is Ba.

13. The method for producing a nitridosilicate-based compound according to claim 1 , wherein the nitridosilicate-based compound is a nitridosilicate-based phosphor.

14. A method for producing a nitridosilicate-based compound, comprising reacting

a material containing a rare earth compound capable of generating a rare earth oxide LnO or Ln 2 O 3 by heating, where Ln is at least one element selected from rare earth elements of atomic numbers 21, 39, and 57-71; and O is oxygen,

a silicon compound, wherein the silicon compound is at least one compound selected from silicon nitride and silicon diimide, and

carbon

in an atmosphere of nitriding gas.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 16, 2023
From: PANASONIC HOLDINGS CORPORATION
To: SHENZHEN JUFEI OPTOELECTRONICS CO., LTD.
Reel/Frame 063112/0487 →
CHANGE OF NAME Recorded Oct 3, 2022
From: PANASONIC CORPORATION
To: PANASONIC HOLDINGS CORPORATION
Reel/Frame 061588/0382 →
CHANGE OF NAME Recorded Nov 21, 2008
From: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
To: PANASONIC CORPORATION
Reel/Frame 021897/0588 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 5, 2007
From: OSHIO, SHOZO
To: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Reel/Frame 018851/0110 →