Conductive thin film and thin film transistor
View Patent ↗To provide an inexpensive and flexible conductive thin film which is excellent in carrier mobility and electric conductivity and which is formed by highly orienting nanotube or an electronic functional organic material by simple and convenient means, as well as a thin film transistor using the conductive thin film. A conductive thin film ( 1 ) is formed by mixing a first material ( 5 ) having electric conductivity or semiconductivity and a second material ( 6 ) to prepare a mixture and orienting the mixture by utilizing liquid crystallinity thereof.
1. A conductive thin film which is formed by mixing at least a non-liquid-crystalline organic semiconductor compound and a non-liquid-crystalline organic compound to form a liquid crystalline organic semiconductor mixture and orienting molecules of the liquid crystalline organic semiconductor mixture to cause molecules of the organic semiconductor compound to be oriented.
2. The conductive thin film according to claim 1 , wherein said liquid crystalline organic semiconductor mixture is a liquid crystalline organic semiconductor mixture in which said organic semiconductor compound and said organic compound are hydrogen-bonded to each other.
3. The conductive thin film according to claim 2 , wherein one of said organic semiconductor compound and said organic compound is a compound having at least one element selected from nitrogen, oxygen, sulfur and halogen and the element selected is hydrogen-bonded to hydrogen.
4. The conductive thin film according to claim 3 , wherein the one of said organic semiconductor compound and said organic compound which has at least said element selected is a compound further having at least one of an unsaturated bond and a benzene ring.
5. The conductive thin film according to claim 1 , wherein said organic semiconductor compound is a derivative comprising an organic semiconductor compound of at least any one of an acene type, a phthalocyanine type and a thiophene type.
6. The conductive thin film according to claim 5 , wherein the derivative comprising an organic semiconductor compound of said acene type is a pentacene derivative.
7. The conductive thin film according to claim 5 , wherein the derivative comprising an organic semiconductor compound of said phthalocyanine type is a copper phthalocyanine derivative.
8. The conductive thin film according to claim 1 , which is formed by orienting molecules of said organic semiconductor mixture to cause molecules of said liquid crystalline organic semiconductor compound to be oriented and then removing said organic compound from said liquid crystalline organic semiconductor mixture.
9. The conductive thin film according to claim 8 , which is formed by removing said organic compound from said liquid crystalline organic semiconductor mixture by at least one of heating and ultraviolet irradiation.
10. A thin film transistor comprising a conductive thin film as recited in claim 1 as a semiconductor layer forming a channel layer.
11. An image display device comprising a conductive thin film as recited in claim 1 as at least one of a conductive layer and a semiconductor layer forming a channel layer of a thin film transistor.
12. An electronic device comprising a conductive thin film as recited in claim 1 as at least one of a conductive layer and a semiconductor layer forming a channel layer of a thin film transistor.
13. A conductive thin film, which is formed by mixing at least an organic semiconductor compound having a first liquid crystalline phase in which crystallization temperature allowing crystallization from the liquid crystalline phase to occur is not lower than room temperature and an organic compound exhibiting a second liquid crystalline phase of a lower orientational order than the first liquid crystalline phase within a temperature range that is higher than the crystallization temperature of the organic semiconductor compound so as to contain 70 to 98 wt % of said organic semiconductor compound to form a mixed composition and orienting the mixed composition in the second liquid crystalline phase exhibited within a predetermined temperature range to cause molecules of the organic semiconductor compound to be oriented.
14. The conductive thin film according to claim 13 , wherein said first liquid crystalline phase is a smectic liquid crystalline phase, while said second liquid crystalline phase is a nematic liquid crystalline phase.
15. The conductive thin film according to claim 13 , wherein said organic semiconductor compound is an organic semiconductor compound comprising a low polymer organic semiconductor compound.
16. The conductive thin film according to claim 13 , wherein said mixed composition is a mixed composition containing 90 to 95 wt % of said organic semiconductor compound.
17. The conductive thin film according to claim 13 , wherein said organic semiconductor compound is an organic semiconductor compound comprising an oligothiophene derivative.
18. A thin film transistor comprising a conductive thin film as recited in claim 13 as a semiconductor layer forming a channel layer.
19. An image display device comprising a conductive thin film as recited in claim 13 as at least one of a conductive layer and a semiconductor layer forming a channel layer of a thin film transistor.
20. An electronic device comprising a conductive thin film as recited in claim 13 as at least one of a conductive layer and a semiconductor layer forming a channel layer of a thin film transistor.
21. A method of fabricating a conductive thin film comprising: mixing at least a non-liquid-crystalline organic semiconductor compound and a non-liquid-crystalline organic compound to form a liquid crystalline organic semiconductor mixture; and orienting molecules of the liquid crystalline organic semiconductor mixture to cause molecules of the organic semiconductor compound to be oriented.
22. The method according to claim 21 , wherein a liquid crystalline organic semiconductor mixture in which said organic semiconductor compound and said organic compound are hydrogen-bonded to each other is used as said liquid crystalline organic semiconductor mixture.
23. The method according to claim 22 , wherein a compound having at least one element selected from nitrogen, oxygen, sulfur and halogen is used as one of said organic semiconductor compound and said organic compound and the element selected is hydrogen-bonded to hydrogen.
24. The method according to claim 23 , wherein a compound further having one of an unsaturated bond and a benzene ring is used as the one of said organic semiconductor compound and said organic compound which has at least said element selected.
25. The method according to claim 21 , wherein a derivative comprising an organic semiconductor compound of at least any one of an acene type, a phthalocyanine type and a thiophene type is used as said organic semiconductor compound.
26. The method according to claim 25 , wherein a pentacene derivative is used as the derivative comprising an organic semiconductor compound of said acene type.
27. The method according to claim 25 , wherein a copper phthalocyanine derivative is used as the derivative comprising an organic semiconductor compound of said phthalocyanine type.
28. The method according to claim 21 , which comprises: orienting molecules of said liquid crystalline organic semiconductor mixture to cause molecules of said organic semiconductor compound to be oriented; and then removing said organic compound from said liquid crystalline organic semiconductor mixture.
29. The method according to claim 28 , which comprises removing said organic compound from said liquid crystalline organic semiconductor mixture by at least one of heating and ultraviolet irradiation.
30. A method of fabricating a thin film transistor, comprising a method of fabricating a conductive thin film as recited in claim 21 as a method of fabricating a conductive thin film serving as a semiconductor layer forming a channel layer.
31. A method of fabricating a conductive thin film comprising: mixing at least an organic semiconductor compound having a first liquid crystalline phase in which crystallization temperature allowing crystallization from the liquid crystalline phase to occur is not lower than room temperature and an organic compound exhibiting a second liquid crystalline phase of a lower orientational order than the first liquid crystalline phase within a temperature range that is higher than the crystallization temperature of the organic semiconductor compound so as to contain 70 to 98 wt % of said organic semiconductor compound to form a mixed composition; and orienting the mixed composition in the second liquid crystalline phase exhibited within a predetermined temperature range to cause molecules of the organic semiconductor compound to be oriented.
32. The method according to claim 31 , wherein a smectic liquid crystalline phase is used as said first liquid crystalline phase and a nematic liquid crystalline phase is used as said second liquid crystalline phase.
33. The method according to claim 31 , wherein an organic semiconductor compound comprising a low polymer organic semiconductor compound is used as said organic semiconductor compound.
34. The method according to claim 31 , wherein a mixed composition containing 90 to 95 wt % of said organic semiconductor compound is used as said mixed composition.
35. The method according to claim 31 , wherein an organic semiconductor compound comprising an oligothiophene derivative is used as said organic semiconductor compound.
36. A method of fabricating a thin film transistor, comprising a method of fabricating a conductive thin film as recited in claim 31 as a method of fabricating a conductive thin film serving as a semiconductor layer forming a channel layer.