IP Library Patent Application 10578057
Patent Application
App. No. 10/578,057

Radiation detector

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Quick Facts
Patent No.
US None
App. No.
10/578,057
Abstract

A radiation detector made from a compound, or alloy, comprising CdxZn1-xTe (0≦x≦1), an element from column III or column VII of the periodic table in a concentration about 10 to 10,000 atomic parts per billion and an element selected from C the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu in a concentration about 10 to 10,000 atomic parts per billion exhibits full electrical compensation, high-resistivity, full depletion under an applied electrical bias and excellent charge transport.

Claims (12)

1 . A radiation detector made from a compound comprising: Cd x Zn 1-x Te, where 0≦x≦1; an element from column III or column VII of the periodic table in a concentration about 10 to 10,000 atomic parts per billion; and a rare earth element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu in a concentration about 10 to 10,000 atomic parts per billion.

2 . A method of forming a radiation detector compound comprising:

(a) providing a mixture of Cd, Zn and Te;

(b) heating the mixture to a liquid state;

(c) adding to the liquid mixture a first dopant that adds shallow level donors (electrons) to the top of an energy band gap of said mixture when it is solidified;

(d) adding to the liquid mixture a second dopant that adds deep level donors and/or acceptors to the middle of said band gap of said mixture when it is solidified; and

(e) solidifying said mixture including said first and second dopants to form the compound.

3 . The method of claim 2 , wherein the first dopant is an element from column III or column VII of the periodic table.

4 . The method of claim 3 , wherein the first dopant is an element selected from the group consisting of B, Al, Ga, In, Tl, F, Cl, Br and I.

5 . The method of claim 2 , wherein a concentration of the first dopant in the compound is about 10 to 10,000 atomic parts per billion.

6 . The method of claim 2 , wherein the second dopant is an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu.

7 . The method of claim 2 , wherein a concentration of the second dopant in the compound is about 10 to 10,000 atomic parts per billion.

Assignments (4)
CHANGE OF NAME Recorded Mar 6, 2013
From: KROMEK ACQUISITION CORPORATION
To: EV PRODUCTS, INC.
Reel/Frame 029939/0282 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 18, 2013
From: ENDICOTT INTERCONNECT TECHNOLOGIES, INC.
To: KROMEK ACQUISITION CORPORATION
Reel/Frame 029824/0158 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 14, 2009
From: EV PRODUCTS, INC.
To: ENDICOTT INTERCONNECT TECHNOLOGIES, INC.
Reel/Frame 022949/0976 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 19, 2007
From: SZELES, CSABA
To: II-VI INCORPORATED
Reel/Frame 019031/0110 →