Flexible electronics using ion implantation to adhere polymer substrate to single crystal silicon substrate
View Patent ↗An electronic apparatus uses a single crystalline silicon substrate disposed adjacent to a flexible substrate. The electronic apparatus may be a flexible flat panel display, or a flexible printed circuit board. The flexible substrate can be made from polymer, plastic, paper, flexible glass, and stainless steel. The flexible substrate is bonded to the single crystalline substrate using an ion implantation process. The ion implantation process involves the use of a noble gas such as hydrogen, helium, xenon, and krypton. A plurality of semiconductor devices are formed on the single crystalline silicon substrate. The semiconductor devices may be thin film transistors for the flat panel display, or active and passive components for the electronic device.
1. A method of forming an electronic apparatus, comprising:
providing a flexible substrate;
providing a single crystalline silicon substrate disposed adjacent to the flexible substrate, wherein the flexible substrate is bonded to the single crystalline substrate by an ion implantation process through the flexible substrate to an interface of the flexible substrate and the single crystalline silicon substrate; and
providing a plurality of semiconductor devices formed on the single crystalline silicon substrate.
2. The method of claim 1 , wherein the electronic apparatus is a flexible flat panel display.
3. The method of claim 1 , wherein the electronic apparatus is a flexible printed circuit board.
4. The method of claim 1 , wherein the ion implantation process uses a noble gas.
5. The method of claim 1 , wherein the ion implantation process uses a gas selected from the group consisting of hydrogen, helium, xenon, and krypton.
6. The method of claim 1 , wherein the flexible substrate includes a polymer material.
7. The method of claim 1 , wherein the flexible substrate includes a material selected from the group consisting of polymer, plastic, paper, flexible glass, and stainless steel.
8. The method of claim 1 , wherein the plurality of semiconductor devices includes thin film transistors.