Nanoscale crystalline silicon powder
View Patent ↗Aggregated crystalline silicon powder with a BET surface area of 20 to 150 m 2 /g. It is prepared by subjecting at least one vaporous or gaseous silane and optionally at least one vaporous or gaseous doping material, an inert gas and hydrogen to heat in a hot wall reactor, cooling the reaction mixture or allowing the reaction mixture to cool and separating the product from gaseous substances in the form of a powder, wherein the proportion of silane is between 0.1 and 90 wt. %, with respect to the sum of silane, doping material, hydrogen and inert gases, and wherein the proportion of hydrogen, with respect to the sum of hydrogen, silane, inert gas and doping material, is in the range 1 mol. % to 96 mol. %. It can be used to produce electronic components.
1. A process for preparing an aggregated crystalline silicon powder comprising:
subjecting at least one vaporous or gaseous silane, an inert gas, hydrogen and optionally at least one vaporous or gaseous doping material, to heat in a hot wall reactor to form a reaction mixture comprising a product and gaseous substances,
cooling the reaction mixture and
separating the reaction product from the gaseous substances in the form of the aggregated crystalline silicon powder,
wherein
a proportion of the at least one silane is from 0.1 to 90 wt. %, with respect to the sum of the at least one silane, the optional at least one doping material, the hydrogen and the inert gases,
a proportion of the hydrogen, with respect to the sum of the hydrogen, the at least one silane, the inert gas and the optional at least one doping material is in the range of from 1 mol. % to 96 mol. %, and
the aggregated crystalline silicon powder has a BET surface area of 20 to 150 m 2 /g.
2. The process according to claim 1 , wherein the at least one silane is selected from the group consisting of SiH 4 , Si 2 H 6 , ClSiH 3 , Cl 2 SiH 2 , Cl 3 SiH, SiCl 4 , and mixtures thereof.
3. The process according to claim 1 , wherein the at least one silane is selected from the group consisting of N(SiH 3 ) 3 , HN(SiH 3 ) 2 , H 2 N(SiH 3 ), (H 3 Si) 2 NN(SiH 3 ) 2 , (H 3 Si)NHNH(SiH 3 ), H 2 NN(SiH 3 ) 2 , and mixtures thereof.
4. The process of claim 1 , comprising the at least one doping material, wherein the at least one doping material is selected from the group consisting of hydrogen-containing compounds of phosphorus, arsenic, antimony, bismuth, boron, aluminium, gallium, indium, thallium, europium, erbium, cerium, praseodymium, neodymium, samarium, gadolinium, terbium, dysprosium, holmium, thulium, ytterbium, lutetium, lithium, germanium, iron, ruthenium, osmium, cobalt, rhodium, iridium, nickel, palladium, platinum, copper, silver, gold, zinc, and combinations thereof.
5. The process of claim 1 , comprising the at least one doping material, wherein the at least one doping material is lithium metal or lithium amide (LiNH 2 ).
6. The process of claim 1 wherein the inert gas is selected from the group consisting of nitrogen, helium, neon, argon, and combinations thereof.
7. The process of claim 1 , comprising at least one doping material.