IP Library Granted Patent US 7,709,829
Granted Patent B2
US 7,709,829 · App. 10/586,793 · Granted May 4, 2010

Organic semiconductor material, organic transistor, field effect transistor, switching device and thiazole compound

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,709,829
App. No.
10/586,793
Granted
May 4, 2010
Kind
B2
Abstract

An organic semiconductor material comprising a compound having a substructure represented by Formula (10): wherein B represents a unit having a thiazole ring, A 1 and A 2 each independently represent a unit having an alkyl group as a substituent, A 3 represents a divalent linking group, n b represents an integer 1-20, n 1 and n 2 each independently represent an integer of 0-20, respectively, and n 3 represents an integer of 0-10.

Claims (27)

1. An organic semiconductor material comprising a compound represented by Formula (10):

wherein B represents a unit having an unsubstituted thiazole ring selected from the group consisting of Formula (11), Formula (12), and Formula (13),

wherein R represents a hydrogen atom, A 1 and A 2 each independently represent a divalent linking group having an alkyl group as a substituent, A 3 represents a divalent linking group, n b represents an integer of 1-20, n 1 and n 2 each independently represent an integer of 0-20, and n 3 represents an integer of 0-10, wherein at least one of n 1 , n 2 , and n 3 is an integer of 1 or more.

2. The organic semiconductor material of claim 1 , wherein, in Formula (10), B represents a unit having plurality of thiazole rings connected consecutively, and at least one of n 1 , n 2 and n 3 is an integer of 1 or more.

3. An organic transistor having the organic semiconductor of claim 1 in an active layer.

4. A field effect transistor comprising an organic charge transport material and a gate electrode directly or indirectly contacting with the organic charge transport material, a current in the organic charge transport material being controlled by a voltage applied between the gate electrode and the organic charge transport material,

wherein the organic charge transport material is the organic semiconductor material of claim 1 .

5. A switching element comprising the field effect transistor of claim 4 .

6. An organic semiconductor material comprising a compound having a thiazole moiety represented by Formula (1), (1-2), (1-3), (1-4), (2), (2-2), (2-3), (2-4), (3), (3-2), (3-3), (3-4), (4), (4-2), (4-3), or (4-4):

wherein R represents a hydrogen atom, A 1 and A 2 each independently represent a divalent linking group having an alkyl group as a substituent, A 3 represents a divalent linking group, A 4 and A 5 each represent a substituent, n represents an integer of 1-10, n1 and n2 each independently represent an integer of 0-20, n3 represents an integer of 0-10, and n4 represents an integer of 2-20, wherein at least one of n1, n2, n3 is an integer of 1 or more,

wherein R represents a hydrogen atom or a substituent, A 3 represents a divalent linking group, A 4 and A 5 each represent a substituent, n represents an integer of 1-10, n3 represents an integer of 1-10, and n4 represents an integer of 2-20,

wherein R represents a hydrogen atom, A 2 represents a divalent linking group having an alkyl group as a substituent, A 3 represents a divalent linking group, A 4 and A 5 each represent a substituent, n represents an integer of 1-10, n2 represents an integer of 1-20, n3 represents an integer of 0-10, and n4 represents an integer of 2-20,

wherein R represents a hydrogen atom, A 1 represents a divalent linking group having an alkyl group as a substituent, A 3 represents a divalent linking group, A 4 and A 5 each represent a substituent, n represents an integer of 1-10, n1 represents an integer of 1-20, n3 represents an integer of 0-10, and n4 represents an integer of 2-20,

wherein R represents a hydrogen atom, A 1 and A 2 each independently represent a divalent linking group having an alkyl group as a substituent, A 3 represents a divalent linking group, A 4 and A 5 each represent a substituent, n represents an integer of 1-10, n1 and n2 each independently represent an integer of 0-20, n3 represents an integer of 0-10, and n5 represents an integer of 1-20, wherein at least one of n1, n2, and n3 is an integer of 1 or more,

wherein represents a hydrogen atom or a substituent, A 3 represents a divalent linking group, A 4 and A 5 each represent a substituent, n represents an integer of 1-10, n3 represents an integer of 1-10, and n5 represents an integer of 1-20,

wherein R represents a hydrogen atom, A 2 represents a divalent linking group having an alkyl group as a substituent, A 3 represents a divalent linking group, A 4 and A 5 each represent a substituent, n represents an integer of 1-10, n2 represents an integer of 1-20, n3 represents an integer of 0-10, and n5 represents an integer of 1-20,

wherein R represents a hydrogen atom, A 1 and A 3 each represent a divalent linking group having an alkyl group as a substituent, A 4 and A 5 each represent a substituent, n represents an integer of 1-10, n1 represents an integer of 1-20, n3 represents an integer of 0-10, and n5 represents an integer of 1-20,

wherein R represents a hydrogen atom, A 1 and A 2 each independently represent a divalent linking group having an alkyl group as a substituent, A 3 represents a divalent linking group, n1 and n2 each independently represent an integer of 0-20, n3 represents an integer of 0-10, n4 represents an integer of 2-20, and n represents a number of repeating monomer segments or a degree of polymerization in a polymer, wherein at least one of n1, n2, and n3 is an integer of 1 or more,

wherein R represents a hydrogen atom or a substituent, A 3 represents a divalent linking group, n3 represents an integer of 1-10, n4 represents an integer of 2-20, and n represents a number of repeating monomer segments or a degree of polymerization in a polymer,

wherein R represents a hydrogen atom, A 2 represents a divalent linking group having an alkyl group as a substituent, A 3 represents a divalent linking group, n2 represents an integer of 1-20, n3 represents an integer of 0-10, n4 represents an integer of 2-20, and n represents a number of repeating monomer segments or a degree of polymerization in a polymer,

wherein R represents a hydrogen atom, A 1 represents a divalent linking group having an alkyl group as a substituent, A 3 represents a divalent linking group, n1 represents an integer of 1-20, n3 represents an integer of 0-10, n4 represents an integer of 2-20, and n represents a number of repeating monomer segments or a degree of polymerization in a polymer,

wherein R represents a hydrogen atom, A 1 and A 2 each independently represent a divalent linking group having an alkyl group as a substituent, A 3 represents a divalent linking group, n1 and n2 each independently represent an integer of 0-20, n3 represents an integer of 0-10, n5 represents an integer of 1-20, and n represents a number of repeating monomer segments or a degree of polymerization in a polymer, wherein at least one of n1, n2, and n3 is an integer of 1 or more,

wherein R represents a hydrogen atom or a substituent, A 3 represents a divalent linking group, n3 represents an integer of 1-10, n5 represents an integer of 1-20, and n represents a number of repeating monomer segments or a degree of polymerization in a polymer,

wherein R represents a hydrogen atom, A 2 represents a divalent linking group having an alkyl group as a substituent, A 3 represents a divalent linking group, n2 represents an integer of 1-20, n3 represents an integer of 0-10, n5 represents an integer of 1-20, and n represents a number of repeating monomer segments or a degree of polymerization in a polymer,

wherein R represents a hydrogen atom, A 1 represents a divalent linking group having an alkyl group as a substituent, A 3 represents a divalent linking group, n1 represents an integer of 1-20, n3 represents an integer of 0-10, n5 represents an integer of 1-20, and n represents a number of repeating monomer segments or a degree of polymerization in a polymer.

7. The organic semiconductor material of claim 6 , wherein the compound having the thiazole moiety is a polymer.

8. The organic semiconductor material of claim 6 , wherein the compound having the thiazole moiety has an average molecular weight of 1000-200000.

Assignments (4)
QUITCLAIM ASSIGNMENT Recorded Sep 18, 2025
From: FLEX DISPLAY SOLUTIONS, LLC
To: EDISON INNOVATIONS LLC
Reel/Frame 072942/0422 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 29, 2020
From: MONUMENT PEAK VENTURES, LLC
To: FLEX DISPLAY SOLUTIONS, LLC
Reel/Frame 052793/0554 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 1, 2018
From: KONICA MINOLTA, INC.
To: MONUMENT PEAK VENTURES, LLC
Reel/Frame 046530/0270 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 20, 2006
From: TANAKA, TATSUO; KITA, HIROSHI; HIRAI, KATSURA; TAKEMURA, CHIYOKO
To: KONICA MINOLTA HOLDINGS, INC.
Reel/Frame 018095/0984 →