Optoelectronic component, device comprising a plurality of optoelectronic components, and method for the production of an optoelectronic component

1. An optoelectronic component, comprising:

a semiconductor function region with an active zone and a lateral main direction of extension, wherein said semiconductor function region is provided with at least one opening extending through said active zone in a direction orthogonal to the main direction, wherein the semiconductor function region with the active zone is a radiation-emitting or radiation-receiving component, and wherein the active zone is configured to generate at least one of electroluminescent radiation and an electrical signal when incident radiation generates charge carriers in the active zone;

a connecting conductor material that is disposed in the region of said opening and electrically isolated from said active zone at least in a subregion of said opening;

a carrier, wherein the semiconductor function region is supported by the carrier; and

a mirror layer arranged between the semiconductor function region and the carrier,

wherein the opening penetrates through the mirror layer; and

wherein the opening is completely surrounded and bounded in the lateral direction by the mirror layer in a region where the opening penetrates through the mirror layer.

2. A device comprising a plurality of optoelectronic components as in claim 1 , wherein said semiconductor function regions are disposed at least partially side by side in the lateral direction.

3. The device as in claim 2 , wherein an envelope forms at least partially around said semiconductor function regions, and wherein said envelope is configured in one piece.

4. The device as in claim 3 , wherein said semiconductor function regions are mechanically stabilized by a stabilization layer.

5. The device as in claim 4 , wherein said envelope is configured as said stabilization layer or part of said stabilization layer.

6. The device as in claim 2 , wherein said device can be fabricated in the wafer composite.

7. The optoelectronic component as in claim 1 , wherein said connecting conductor material is at least partially electrically isolated from said active zone by an isolation material.

8. The optoelectronic component as in claim 7 , wherein said isolation material at least partially lines said opening.

9. The optoelectronic component as in claim 1 , wherein said semiconductor function region comprises a first main face and a second main face located oppositely from said first main face relative to said active zone, and said semiconductor function region is connected electrically conductively to said connecting conductor material on a side comprising said first main face.

10. The optoelectronic component as in claim 9 , wherein said connecting conductor material is electrically isolated from said second main face of said semiconductor function region.

11. The optoelectronic component as in claim 1 , wherein a lateral dimension of said opening is equal to 100 μm or less.

12. The optoelectronic component as in claim 1 , wherein an envelope forms at least partially around said semiconductor function region.

13. The optoelectronic component as in claim 12 , wherein said envelope is transparent to radiation to be generated or received by said active zone.

14. The optoelectronic component as in claim 1 , wherein said active zone is surrounded by an encapsulation that is substantially hermetically tight.

15. The optoelectronic component as in claim 1 , wherein said connecting conductor material extends to a side of said carrier that is opposite said semiconductor function region.

16. The optoelectronic component as in claim 1 , wherein said component can be fabricated in the wafer composite.

17. The optoelectronic component as in claim 1 , wherein the opening extends entirely through said active zone.

18. The optoelectronic component as in claim 1 , wherein the opening is configured in the form of a gap that penetrates all the way through the semiconductor function region, and wherein the gap is completely surrounded in the lateral direction and bounded laterally by the semiconductor function region.

19. An optoelectronic component, comprising:

a semiconductor function region with an active zone and a lateral main direction of extension, wherein said semiconductor function region is provided with at least one opening extending through said active zone in a direction orthogonal to the main direction, wherein the semiconductor function region with the active zone is a radiation-emitting or radiation-receiving component, and wherein the active zone is configured to generate at least one of electroluminescent radiation and an electrical signal when incident radiation generates charge carriers in the active zone;

a connecting conductor material that is disposed in the region of said opening and electrically isolated from said active zone at least in a subregion of said opening;

a carrier, wherein the semiconductor function region is supported by the carrier; and

a mirror layer arranged between the semiconductor function region and the carrier,

wherein the opening penetrates through the mirror layer; and

wherein the connecting conductor material extends through the mirror layer within the opening.

20. A device, comprising:

an optoelectronic component comprising:

a semiconductor function region with an active zone and a lateral main direction of extension, wherein said semiconductor function region is provided with at least one opening extending through said active zone in a direction orthogonal to the main direction, wherein the semiconductor function region with the active zone is a radiation-emitting or radiation-receiving component, and wherein the active zone is configured to generate at least one of electroluminescent radiation and an electrical signal when incident radiation generates charge carriers in the active zone;

a connecting conductor material that is disposed in the region of said opening and electrically isolated from said active zone at least in a subregion of said opening;

a carrier, wherein the semiconductor function region is supported by the carrier; and

a mirror layer arranged between the semiconductor function region and the carrier, wherein the opening penetrates through the mirror layer; and

lead electrodes that are separate from the carrier and electrically connected to the optoelectronic component.