Nitride based LED with a p-type injection region
View Patent ↗An LED chip ( 2 ) is composed of a p-GaN layer ( 10 ), an n-GaN layer ( 14 ), and an MQW emission layer ( 12 ) that is sandwiched between the GaN layers ( 10 and 14 ). Each layer is made of a GaN semiconductor. Light exits the LED chip ( 2 ) through the n-GaN layer ( 14 ). A p-electrode ( 16 ) of the LED chip ( 2 ) has a surface profile ( 24 B) defined by a plurality of columnar projections ( 24 A) formed in a uniformly distributed relation on the surface facing toward the p-GaN layer ( 10 ). The p-electrode ( 16 ) is in contact with the p-GaN layer ( 10 ) at the top surface of each projection ( 24 A).
1. A semiconductor light emitting device, comprising:
a semiconductor multilayer structure composed of a p-semiconductor layer, a quantum well emission layer, and an n-semiconductor layer each made of a nitride semiconductor and laminated in the stated order, light from the emission layer exiting through the n-semiconductor layer; and
a p-electrode facing and in electrical connection with the p-semiconductor layer, wherein
the p-semiconductor layer has, on a surface facing toward the p-electrode, (i) high-defect of dislocation-density regions in which defects of dislocation are localized and (ii) low-defect of dislocation-density regions, the high and low-defect of dislocation-density regions being at regularly or selectively distributed locations,
the p-electrode has, on a surface facing toward the p-semiconductor layer, a plurality of projections or depressions that are distributed substantially uniformly, and
the p-electrode is directly in contact, at a top surface thereof, with the low-defect of dislocation-density regions of the p-semiconductor layer.
2. The semiconductor light emitting device according to claim 1 , wherein
the p-electrode is made of a metal that reflects light from the emission layer toward the n-semiconductor layer.
3. The semiconductor light emitting device according to claim 2 , further comprising
an insulator disposed on a recessed surface of the p-electrode to fill a space between the recessed surface and the p-semiconductor layer.
4. The semiconductor light emitting device according to claim 3 , wherein
the insulator is made of a material transparent to light emitted by the emission layer.
5. The semiconductor light emitting device according to claim 3 , wherein
the insulator has a substantially same refractive index as a refractive index of the nitride semiconductor forming the p-semiconductor layer.
6. The semiconductor light emitting device according to claim 1 , wherein
a drive current for driving the semiconductor light emitting device is maintained within such a range that results in an average current density not exceeding 50 A/cm 2 , the average current density being calculated by dividing the drive current by an area of a main surface of the emission layer,
the p-electrode faces substantially entirely of the main surface of the emission layer, and
a ratio between the top and recessed surfaces of the p-electrode is determined so that an electric current flowing through the top surface of the p-electrode measures at least 100 A/cm 2 in current density.
7. The semiconductor light emitting device according to claim 1 , wherein
the high-defect of dislocation-density regions are distributed to define one of a quadrangular grid, a hexagonal grid, a triangular grid, and a staggered grid.
8. The semiconductor light emitting device according to claim 1 , wherein
a intensive-injection region is realized by a contact structure of the p-semiconductor layer with the p-electrode.
9. The semiconductor light emitting device according to claim 8 , wherein
the semiconductor multilayer structure has, on a surface facing toward the p-electrode, a plurality of projections or depressions that are distributed substantially uniformly, and
the semiconductor multilayer structure is in contact with the p-electrode at a top surface of the p-semiconductor layer.
10. The semiconductor light emitting device according to claim 9 , wherein
the p-electrode is made of a metal that reflects light from the emission layer toward the n-semiconductor layer.
11. The semiconductor light emitting device according to claim 9 , wherein
a recessed surface of the semiconductor multilayer structure is present in the n-semiconductor layer.
12. The semiconductor light emitting device according to claim 9 , wherein
the semiconductor multilayer structure has, on the surface facing toward the p-electrode, a high-defect of dislocation region in which lattice defects of dislocation are localized and a low-defect of dislocation region formed adjacent to the high-defect of dislocation region, and
the low-defect of dislocation region is present at the top surface of the semiconductor multilayer structure.
13. The semiconductor light emitting device according to claim 1 , further comprising:
a base substrate supporting the semiconductor multilayer structure from a direction of the p-semiconductor layer; and
a phosphor film disposed on a main surface of the semiconductor multilayer structure facing away from the base substrate, the phosphor film extending across a side surface of the semiconductor multilayer structure to the base substrate.
14. A lighting module comprising:
a mounting substrate; and
the semiconductor light emitting device as defined in claim 1 .
15. A lighting device comprising, as a light source, the lighting module as defined in claim 14 .
16. A surface mounting device comprising:
a substrate;
a semiconductor light emitting device as defined in claim 1 , and mounted on the substrate; and
a resin molding the semiconductor device.
17. A dot-matrix display device comprising:
semiconductor light emitting devices as defined in claim 1 and are arranged in a matrix.