IP Library Granted Patent US 7,504,865
Granted Patent B2
US 7,504,865 · App. 10/592,427 · Granted Mar 17, 2009

Frequency sensor and semiconductor device

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,504,865
App. No.
10/592,427
Granted
Mar 17, 2009
Kind
B2
Abstract

A frequency sensor includes at least one a resistor element and a capacitor. A frequency is detected according to a charging/discharging time to/from the capacitor, thereby realizing a frequency sensor with reduced power consumption and reduced circuit scale. Further, plural resistors and plural capacitors can be provided, along with switches connected to the respective resistors and capacitors. Additionally, a time constant can be adjusted after production, whereby variations in production can be reduced. Furthermore, a self-diagnosis circuit can be included for determining whether the frequency sensor itself operates normally or not. Thus, a highly-reliable frequency sensor can be realized.

Claims (36)

1. A frequency sensor including:

a first conductivity type MOS transistor having a gate to which an input clock signal is applied, and a source connected to a first power supply voltage;

a second conductivity type MOS transistor having a gate to which the input clock signal is applied, and a source connected to a second power supply voltage;

a resistor connected between drains of said first and second MOS transistors; and

a capacitor connected between the drain of said first MOS transistor and said second power supply voltage;

an inverter having an input terminal connected to a connection node of said capacitor and said resistor; and

a third conductivity type MOS transistor having a gate connected to an output terminal of said inverter, a drain connected to the input terminal of said inverter, and a source connected to the second power supply voltage;

wherein a frequency of the input clock signal is detected by an output signal of the inverter.

2. A frequency sensor as defined in claim 1 wherein a resistor block comprising switch-attached resistors is provided instead of said resistor, each switch-attached resistor including a switch for switching each corresponding resistor between an enable state and a disable state.

3. A frequency sensor as defined in claim 1 wherein a capacitor block comprising switch-attached capacitors is provided instead of said capacitor, each switch-attached capacitor including a switch for switching each corresponding capacitor between an enable state and a disable state.

4. A frequency sensor as defined in claim 2 wherein the switch comprises a fuse.

5. A frequency sensor as defined in claim 3 wherein the switch comprises a fuse.

6. A frequency sensor as defined in claim 2 wherein ON/OFF of the switch is set according to data stored in a nonvolatile memory.

7. A frequency sensor as defined in claim 3 wherein ON/OFF of the switch is set according to data stored in a nonvolatile memory.

8. A frequency sensor as defined in claim 1 wherein the clock signal is applied as an inversion signal of the clock signal.

9. A frequency sensor as defined in claim 1 further including a self-diagnosis unit for checking whether the frequency sensor operates normally or not.

10. A frequency sensor as defined in claim 9 wherein said self-diagnosis unit comprises:

a high frequency generation circuit that generates a high frequency from the input clock signal, which is provided in said self-diagnosis unit;

a switching unit that switches a signal to be inputted to the frequency sensor between the input clock signal and a high frequency clock signal that is outputted from said high frequency generation circuit; and

a judgement circuit that detects a signal detected by the frequency sensor to judge whether the frequency sensor operates normally or not.

11. A frequency sensor as defined in claim 9 wherein said self-diagnosis unit comprises:

a low frequency generation circuit that generates a low frequency from the input clock signal, which is provided in said self-diagnosis unit;

a switching unit that switches a signal to be inputted to the frequency sensor between the input clock signal and a low frequency clock signal that is outputted from said low frequency generation circuit; and

a judgement circuit that detects a signal detected by the frequency sensor to judge whether the frequency sensor operates normally or not.

12. A semiconductor device comprising:

a frequency sensor, said frequency sensor including:

a first conductivity type MOS transistor having a gate to which an input clock signal is applied, and a source connected to a first power supply voltage;

a second conductivity type MOS transistor having a gate to which the input clock signal is applied, and a source connected to a second power supply voltage;

a resistor connected between drains of said first and second MOS transistors; and

a capacitor connected between the drain of said first MOS transistor and said second power supply voltage;

an inverter having an input terminal connected to a connection node of said capacitor and said resistor; and

a third conductivity type MOS transistor having a gate connected to an output terminal of said inverter, a drain connected to the input terminal of said inverter, and a source connected to the second power supply voltage, wherein a frequency of the input clock signal is detected by an output signal of the inverter; and

a semiconductor device body to which the input clock signal is applied, the operation of which is controlled according to a signal detected by the frequency sensor.

13. A semiconductor device as defined in claim 12 wherein said semiconductor device body is reset by the detected signal.

14. A semiconductor device as defined in claim 12 wherein said semiconductor device body stops its operation according to the detected signal.

15. A semiconductor device as defined in claim 12 wherein said semiconductor device body deletes or destroys the stored data for which confidentiality is required, according to the detected signal.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 27, 2020
From: PANASONIC CORPORATION
To: PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD.
Reel/Frame 052755/0917 →
CHANGE OF NAME Recorded Nov 21, 2008
From: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
To: PANASONIC CORPORATION
Reel/Frame 021897/0588 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 6, 2007
From: ITOH, RIE; SADAYUKI, EIICHI
To: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Reel/Frame 019524/0363 →