Method of impurity introduction, impurity introduction apparatus and semiconductor device produced with use of the method
View Patent ↗An impurity region having a box-shaped impurity profile is formed. An impurity introducing method includes a step of introducing a desired impurity into a surface of a solid base body, and a step of radiating plasma to a surface of the solid base body after the impurity introducing step thus forming an impurity profile having an approximately box-shape.
1. An impurity introducing method which comprising:
a step of introducing an impurity selected from a group consisting of B, As, P, Sb and In into a surface of a semiconductor substrate; and
a step of radiating inactive He plasma to the surface of the semiconductor substrate after the impurity is introduced in the impurity introducing step, wherein the inactive He plasma is radiated while the semiconductor substrate is cooled.
2. The impurity introducing method according to claim 1 , wherein the step of radiating the plasma includes a step of radiating plasma such that the impurity possesses a desired impurity profile in the semiconductor substrate.
3. The impurity introducing method according to claim 1 , wherein a temperature of the surface of the semiconductor substrate is kept below 200 degree Celsius.
4. The impurity introducing method according to claim 3 , wherein the temperature of the surface of the semiconductor substrate is kept below 100 degree Celsius.
5. The impurity introducing method according to claim 1 , wherein the step of introducing the impurity includes a plasma-doping step.
6. The impurity introducing method according to claim 1 , wherein the step of introducing the impurity includes an ion-implanting step.
7. The impurity introducing method according to claim 1 , wherein the step of introducing the impurity includes a gas-doping step.
8. An impurity introducing method comprising:
a step of introducing an impurity selected from a group consisting of B, As, P, Sb and In into a surface of a semiconductor substrate; and
a step of radiating inactive He plasma to the surface of the semiconductor substrate after the impurity introducing step such that the impurity concentration at a depth position of 4 nm is set to be 1/10 or more of the impurity concentration on the surface of the semiconductor substrate, wherein the inactive He plasma is radiated while the semiconductor substrate is cooled.
9. The impurity introducing method according to claim 8 , wherein the impurity concentration at a depth position of 7 nm is set to be 1/100 or more of the impurity concentration on the surface of the semiconductor substrate.
10. An impurity introducing method comprising:
a step of introducing an impurity selected from a group consisting of B, As, P, Sb and In into a surface of a semiconductor substrate; and
a step of radiating inactive He plasma to the surface of the semiconductor substrate after the impurity is introduced in the impurity introducing step, wherein the inactive He plasma knocks the impurity introduced in the surface, wherein the inactive He plasma is radiated while the semiconductor substrate is cooled.