Semiconductor device, semiconductor device design method, semiconductor device design method recording medium, and semiconductor device design support system
View Patent ↗Repeater cells each comprising a buffer or an inverter and an n+ diffusion layer-P well type protection diode or a p+ diffusion layer-N well type antenna protection diode connected to an input pin of the buffer or the inverter for preventing antenna damage or an antenna rule error from occurring are previously registered by registration means 511 as the cells to be registered in a cell library 505 . Whether or not a wiring conductor conducting to a gate electrode becomes an antenna ratio exceeding an allowed antenna ratio in the semiconductor device is determined by determination means 514 and if the wiring conductor exceeds the allowable antenna ratio, one or more repeater cells are inserted into any point of the wiring conductor by selection means 515.
1. A semiconductor device design method for forming a semiconductor device by combining and placing previously registered functional blocks, and determining a wiring pattern in accordance with given logical circuit specifications, and design method comprising:
a registration step of previously registering a first functional block having a first conduction type diode comprising a first conduction type diffusion layer connected to an input pin of the functional block, and a second conduction type well connected to a second power supply or a second conduction type diode comprising a second conduction type diffusion layer connected to the input pin and a first conduction type well connected to a first power supply and a second functional block having the same logic as and the same drive capability as the first functional block but not containing the first or second conduction type diode;
a determination step of determining whether or not a wiring conductor conducting to the input pin and a gate electrode becomes an antenna ratio exceeding an allowed antenna ratio in said semiconductor device; and
a selection step of selectively using the first functional block, if said determination step determines that the input pin conducts to the gate electrode exceeding the antenna ratio.
2. A semiconductor device formed by combining and placing previously registered functional blocks, and determining a wiring pattern in accordance with given logical circuit specifications, said semiconductor device comprising:
a first functional block including at least one of:
a first conduction type diode having a first conduction type diffusion layer connected to an input pin of the first functional block and a second conduction type well connected to a second power supply, and
a second conduction type diode having a second conduction type diffusion layer connected to the input pin and a first conduction type well connected to a first power supply; and
a second functional block including the same logic as the first functional block but not containing said first or second conduction type diode,
wherein either the first functional block or the second functional block is selectively used depending on whether or not a wiring conductor conducting to the input pin and a gate electrode becomes an antenna ratio exceeding an allowed antenna ratio in said semiconductor device.
3. A semiconductor device design method for forming a semiconductor device by combining and placing previously registered functional blocks, and determining a wiring pattern in accordance with given logical circuit specifications, and design method comprising:
a registration step of previously registering a first functional block having a first conduction type diode comprising a first conduction type diffusion layer connected to an input pin of the functional block, and a second conduction type well connected to a second power supply or a second conduction type diode comprising a second conduction type diffusion layer connected to the input pin and a first conduction type well connected to a first power supply and a second functional block having the same logic as the first functional block but not containing the first or second conduction type diode;
a determination step of determining whether or not a wiring conductor conducting to the input pin and a gate electrode becomes an antenna ratio exceeding an allowed antenna ratio in said semiconductor device; and
a selection step of selectively using the first functional block, if said determination step determines that the input pin conducts to the gate electrode exceeding the antenna ratio.
4. A computer-readable recording medium storing the semiconductor device design method as claimed in claim 3 as a program for causing a computer to execute the semiconductor device design method.
5. A semiconductor device design support system for automatically forming a semiconductor device by combining and placing previously registered functional blocks, and determining a wiring pattern in accordance with given logical circuit specifications, said design support system comprising:
registration means for previously registering a first functional block having a first conduction type diode comprising a first conduction type diffusion layer connected to an input pin of the functional block, and a second conduction type well connected to a second power supply or a second conduction type diode comprising a second conduction type diffusion layer connected to the input pin and a first conduction type well connected to a first power supply and a second functional block having the same logic as the first functional block but not containing the first or second conduction type diode;
determination means for determining whether or not a wiring conductor conducting to the input pin and a gate electrode becomes an antenna ratio exceeding an allowed antenna ratio in said semiconductor device; and
selection means for selectively using the first functional block, if said determination step determines that the input pin conducts to the gate electrode exceeding the antenna ratio.