Liquid crystal display device and fabrication method thereof
View Patent ↗A method for fabricating a liquid crystal display device comprises: providing a transparent substrate; forming a gate electrode and a gate line on the substrate; forming a semiconductor layer pattern on the gate electrode; forming source/drain electrode and a data line vertically intersecting the gate line and defining a pixel region; and forming a striped passivation layer on the data line and on the thin film transistor.
1. A method for fabricating a liquid crystal display device, comprising:
providing a first substrate;
forming a gate electrode and a gate line on the substrate;
forming a semiconductor layer pattern on the gate electrode;
forming source/drain electrode and a data line substantially perpendicular to the gate line and crossing the gate line to define a pixel region;
forming a striped passivation layer on the data line and on the thin film transistor,
providing a second substrate facing the first substrate; and
providing liquid crystal between the first and second substrate.
2. The method of claim 1 , wherein forming the striped passivation layer comprises:
providing a cliche having a groove;
filling a resist into the groove;
applying the resist filled in the groove of the cliché onto an etching objection layer on the first substrate; and
etching the etching objection layer by using the resist applied on an etching objection layer as a mask.
3. The method of claim 2 , wherein applying the resist to the etching objection layer comprises:
transferring the resist filled in the groove of the clichéonto the surface of a printing roll; and
applying the resist of the printing roll onto the etching objection layer by rotating the printing roll.
4. The method of claim 2 , wherein the etching objection layer is an insulation layer.
5. The method of claim 4 , wherein the insulation layer contains inorganic material such as SiOx or SiNx.
6. The method of claim 4 , wherein the insulation layer contains an organic material such as BCB (benzocyclobutene) or acryl.
7. The method of claim 1 , further comprising:
forming a pixel electrode contacting the drain electrode in the pixel region.
8. The method of claim 7 , wherein a portion of the pixel electrode is formed on the dram electrode not covered by the striped passivation layer.
9. The method of claim 1 , further comprising:
forming a storage electrode over the gate line when the source/drain electrode is formed.
10. The method of claim 1 , further comprising:
forming a storage line substantially parallel with the gate line in the pixel region.
11. The method of claim 10 , wherein the storage line is formed at the same time that the gate line is formed.
12. The method of claim 9 , wherein the storage line is formed substantially parallel to and adjacent to the data line in the pixel region.
13. The method of claim 12 , wherein the storage line is formed at the same time that the data line is formed.
14. The method of claim 1 , wherein the striped passivation layer has a constant width.
15. A method of fabricating a liquid crystal display device, comprising:
providing a first substrate;
forming a gate electrode and a gate line on the substrate;
forming a semiconductor layer pattern on the gate electrode;
forming source/drain electrode and a data line substantially perpendicular to the gate line and crossing the gate line to define a pixel region;
forming a striped passivation layer on the data line and on a thin film transistor by roll printing an organic material onto the first substrate;
providing a second substrate facing the first substrate; and
providing liquid crystal between the first and second substrate.
16. The method of claim 15 , further comprising:
forming a pixel electrode contacting the drain electrode in the pixel region.
17. The method of claim 16 , wherein a portion of the pixel electrode is formed on the drain electrode not covered by the striped passivation layer.
18. The method of claim 15 , further comprising:
forming a storage electrode over the gate line when the source/drain electrode is formed.
19. The method of claim 15 , further comprising:
forming a storage line substantially parallel with the gate line in the pixel region.
20. The method of claim 19 , wherein the storage line is formed at the same time that the gate line is formed.
21. The method of claim 20 , wherein the storage line is formed substantially parallel to and adjacent to the data line in the pixel region.
22. The method of claim 21 , wherein the storage line is formed at the same time that the data line is formed.
23. The method of claim 15 , wherein the striped passivation layer has a constant width.
24. The method of claim 15 , wherein the organic material contains BCB (benzocyclobutene), polyimide or acryl.