Semiconductor device and method for producing the same
View Patent ↗A gate electrode is formed on a substrate via a gate insulating film. The gate insulating film includes a high dielectric constant film containing a metal, oxygen and hydrogen, and a lower barrier film formed below the high dielectric constant film and containing a metal, oxygen, silicon and nitrogen.
1. A semiconductor device, comprising:
a gate insulating film formed on a substrate; and
a gate electrode formed on the gate insulating film;
the gate insulating film comprising:
a high dielectric constant film containing a metal, oxygen and silicon; and
a lower barrier film formed below the high dielectric constant film and containing the metal, oxygen, silicon and nitrogen, wherein
023 ≦y /( x+y )≦0.90
when a composition of the high dielectric constant film is expressed as M x Si y O, where M, O and Si represent the metal, oxygen and silicon, respectively, and x>0 and y>0.
2. The semiconductor device according to claim 1 , wherein the gate insulating film comprises an upper barrier film formed above the high dielectric constant film, and
the upper barrier film contains the metal, oxygen and nitrogen.
3. The semiconductor device according to claim 1 , wherein the gate insulating film comprises an upper barrier film formed above the high dielectric constant film, and
the upper barrier film contains the metal, oxygen, silicon and nitrogen.
4. The semiconductor device according to claim 1 , wherein the gate electrode is a metal gate electrode.
5. The semiconductor device according to claim 1 , wherein the lower barrier film is a silicon oxynitride film including the metal.
6. The semiconductor device according to claim 1 , wherein the high dielectric constant film contains nitrogen.
7. A semiconductor device, comprising:
a gate insulating film formed on a substrate; and
a gate electrode formed on the gate insulating film;
the gate insulating film comprising:
a high dielectric constant film containing a metal, oxygen and silicon; and
a lower barrier film formed below the high dielectric constant film and containing the metal, oxygen, silicon and nitrogen, wherein
0.23 ≦y /( x+y )≦0.30
when a composition of the high dielectric constant film is expressed as M x Si y O, where M, O and Si represent the metal, oxygen and silicon, respectively, and x>0 and y>0.
8. A semiconductor device, comprising:
a gate insulating film formed on a substrate; and
a gate electrode formed on the gate insulating film;
the gate insulating film comprising:
a high dielectric constant film containing a metal, oxygen and silicon; and
a lower barrier film formed below the high dielectric constant film and containing the metal, oxygen, silicon and nitrogen, wherein
x /( x+y )≦0.10
when the metal is hafnium or zirconium, and
a composition of the lower barrier film is expressed as M x Si y O z N w , where M, O, Si and N represent the metal, oxygen, silicon and nitrogen, respectively, and x>0, y>0, z>0 and w>0.
9. The semiconductor device according to claim 1 , wherein the lower barrier film is amorphous.
10. The semiconductor device according to claim 1 , wherein the gate electrode is a polysilicon electrode.
11. The semiconductor device according to claim 1 , wherein the gate electrode is made of a material containing silicon.
12. The semiconductor device according to claim 1 , wherein the high dielectric constant film contains chlorine.
13. The semiconductor device according to claim 1 , wherein the high dielectric constant film contains fluorine.
14. The semiconductor device according to claim 1 , wherein the high dielectric constant film contains hydrogen.
15. The semiconductor device according to claim 1 , wherein the high dielectric constant film contains iodine.
16. The semiconductor device according to claim 1 , wherein the high dielectric constant film contains carbon.
17. The semiconductor device according to claim 1 , wherein the high dielectric constant film is amorphous.
18. The semiconductor device according to claim 17 , wherein the high dielectric constant film contains nitrogen.
19. The semiconductor device according to claim 18 , wherein the high dielectric constant film contains crystallites.
20. The semiconductor device according to claim 2 , wherein the upper barrier film is amorphous.
21. The semiconductor device according to claim 1 , wherein
the high dielectric constant film includes a part which is located 1 through 2 nm apart from the gate electrode and which is Hf silicate containing nitrogen.
22. A semiconductor device, comprising:
a gate insulating film formed on a substrate; and
a gate electrode formed on the gate insulating film;
the gate insulating film comprising:
a high dielectric constant film containing a metal, oxygen and silicon, wherein
0.23 ≦y /( x+y )≦0.90
when a composition of the high dielectric constant film is expressed as M x Si y O, where M, O and Si represent the metal, oxygen and silicon, respectively, and x>0 and y>0.
23. The semiconductor device according to claim 22 , wherein the high dielectric constant film contains nitrogen.
24. The semiconductor device according to claim 22 , wherein
the gate insulating film comprises a lower barrier film formed below the high dielectric constant film, and
the lower barrier film contains the oxygen, silicon and nitrogen.
25. A semiconductor device according to claim 22 , wherein
the gate insulating film comprises an upper barrier film formed above the high dielectric constant film, and
the upper barrier film contains the metal, oxygen and nitrogen.
26. A semiconductor device according to claim 22 , wherein
the gate insulating film comprises an upper barrier film formed above the high dielectric constant film, and
the upper barrier film contains the metal, oxygen, silicon and nitrogen.
27. The semiconductor device according to claim 7 , wherein the high dielectric constant film contains nitrogen.
28. The semiconductor device according to claim 8 , wherein the high dielectric constant film contains nitrogen.
29. The semiconductor device according to claim 1 , wherein the metal in the high dielectric constant film is at least one of hafnium or zirconium.
30. The semiconductor device according to claim 1 , wherein
the metal in the high dielectric constant film is at least one of hafnium, zirconium, titanium, tantalum, lanthanum, cerium, or aluminum.
31. The semiconductor device according to claim 14 , wherein 5×10 20 to 4×10 21 hydrogen atoms/cm 3 were contained in the high dielectric constant film.
32. The semiconductor device according to claim 17 , wherein 3×10 19 to 4×10 20 carbon atoms/cm 3 were contained in the high dielectric constant film.