IP Library Granted Patent US 6,925,211
Granted Patent B2
US 6,925,211 · App. 10/602,833 · Granted Aug 2, 2005

Buffer layer structures for stabilization of a lithium niobate device

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Quick Facts
Patent No.
US 6,925,211
App. No.
10/602,833
Granted
Aug 2, 2005
Kind
B2
Abstract

An optical waveguide device including an electro-optical crystal substrate having a top surface and a bottom surface; an optical waveguide path formed within a surface of the electro-optical crystal substrate; at least one electrode positioned above the optical waveguide path for applying an electric field to the optical waveguide path; and a silicon titanium oxynitride layer and a connecting layer for interconnecting the silicon titanium oxynitride layer to another surface of the electro-optical crystal substrate that is opposite to the surface in which the optical waveguide path is formed.

Claims (9)

1. A method for forming an optical waveguide device comprising the steps of:

forming an optical waveguide path within a surface of the electro-optical crystal substrate;

forming a buffer layer comprising silicon, an element in column 4 (IVB) of the periodic table, oxygen, and nitrogen, positioned above the optical waveguide path;

forming at least one electrode positioned above the buffer layer for applying an electric field to the optical waveguide path;

forming a connecting means for interconnecting the thermal stabilization buffer layer to another surface of the electro-optical crystal substrate that is opposite to the surface in which the optical waveguide path is formed.

2. The method for forming an optical waveguide device of claim 1 , wherein the buffer layer is sputter deposited using a target comprised of silicon nitride and a nitride of an element in column 4 (IVB) of the periodic table.

3. The method for forming an optical waveguide device of claim 2 , wherein the buffer layer is sputter deposited in atmosphere containing O 2 and N 2 .

4. The method for forming an optical waveguide device of claim 2 , wherein the target further comprises a rare earth metal.

5. The method for forming an optical waveguide device of claim 2 , wherein an additional target containing a rare earth metal is exposed while the buffer layer is sputter deposited.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 24, 2009
From: COVEGA CORPORATION
To: THORLABS QUANTUM ELECTRONICS, INC.
Reel/Frame 022427/0994 →
RELEASE OF SECURITY INTEREST Recorded Mar 18, 2009
From: SQUARE BANK 1
To: COVEGA CORPORATION
Reel/Frame 022408/0516 →