Semiconductor device and method for fabricating the same
View Patent ↗A metal film formed of a first metal having relatively high oxygen absorption properties on a silicon region, and then depositing a high dielectric constant film formed of an oxide of a second metal having relatively low oxygen absorption properties on the metal film. Thereafter, a conductive film is formed on the high dielectric constant film and then the conductive film is patterned, thereby forming an electrode.
1. A semiconductor device comprising:
a gate insulating film having a multilayer structure including a zirconium oxide film and a high dielectric constant film which is a hafnium oxide film or a hafnium aluminate film and which is formed on the zirconium oxide film,
wherein a silicon nitride film is formed under the zirconium oxide film,
the high dielectric constant film contains nitrogen,
an interface layer between the silicon nitride film and the zirconium oxide film is formed of a zirconium silicate film.
2. The semiconductor device of claim 1 , wherein the silicon nitride film has a thickness of 1 nm or less.
3. The semiconductor device of claim 1 , further comprising a gate electrode on the gate insulating film.
4. The semiconductor device of claim 3 , wherein the gate electrode is a titanium nitride film.
5. The semiconductor device of claim 3 , wherein the gate electrode has a thickness of not less than 30 nm and not more than 100 nm.
6. The semiconductor device of claim 3 , further comprising an insulating sidewall spacer formed to cover the side faces of the gate electrode.
7. The semiconductor device of claim 1 , wherein the high dielectric constant film directly contacts the top surface of the zirconium oxide film.