Liquid crystal display device and method of fabricating the same
View Patent ↗A liquid crystal display device includes a plurality of data lines arranged along a first direction on a substrate, a plurality of gate lines arranged a second direction perpendicular to the first direction on the substrate to define a plurality of pixel regions, each of the gate lines having at least one first set of protrusions and depressions, a driving device within each of the pixel regions, a pixel electrode within each of the pixel regions, and a metal layer overlapping each of the gate lines to create a storage capacitor.
1. A liquid crystal display device, comprising:
a plurality of data lines arranged along a first direction on a substrate;
a plurality of gate lines arranged along a second direction perpendicular to the first direction on the substrate to define a plurality of pixel regions, each of the gate lines having at least one first set of protrusions and depressions extending in a direction substantially perpendicular to a surface of the substrate on which the gate lines are arranged;
a driving device within each of the pixel regions;
a pixel electrode within each of the pixel regions; and
a metal layer overlapping each of the gate lines to create a storage capacitor, the metal layer having at least one set of protrusions and depressions extending in a direction substantially perpendicular to a surface of the substrate on which the metal layer is arranged.
2. The device according to claim 1 , wherein the first set of protrusions and depressions is arranged along the second direction of the gate lines.
3. The device according to claim 2 , wherein the first set of protrusions and depressions are arranged along the first direction of the data lines.
4. The device according to claim 2 , wherein the first set of protrusions and depressions are arranged having a lattice shape.
5. The device according to claim 1 , wherein the driving device includes a thin film transistor.
6. The device according to claim 5 , wherein the thin film transistor includes:
a gate electrode on the substrate;
a gate insulating layer over the substrate;
a semiconductor layer on the gate insulating layer; and
a source electrode and a drain electrode on the semiconductor layer.
7. The device according to claim 6 , further comprising at least one first protrusion/depression layer on the substrate to form the first set of protrusions and depressions.
8. The device according to claim 7 , wherein the first protrusion/depression layer includes metal material.
9. The device according to claim 7 , wherein the first protrusion/depression layer includes insulation material.
10. The device according to claim 6 , further comprising at least one first groove formed within a surface of the substrate to form the first set of protrusions and depressions.
11. The device according to claim 6 , wherein the metal layer is disposed on the gate insulating layer.
12. The device according to claim 11 , wherein the metal layer includes metal material similar to metal material of the source electrode and the drain electrode.
13. The device according to claim 6 , further comprising a second set of protrusions and depressions in the semiconductor layer.
14. The device according to claim 13 , wherein the second set of protrusions and depressions is formed along the source electrode and the drain electrode.
15. The device according to claim 13 , wherein the second set of protrusions and depressions is arranged in a lattice shape.
16. The device according to claim 13 , further comprising a second protrusion/depression layer in the substrate to form the second set of protrusions and depressions.
17. The device according to claim 16 , wherein the second protrusion/depression layer includes insulation material.
18. The device according to claim 16 , wherein the second protrusion/depression layer includes metal material.
19. The device according to claim 13 , further comprising a second groove formed in a surface of the substrate to form the second set of protrusions and depressions.
20. A method of fabricating a liquid crystal display device, comprising:
forming a plurality of data lines arranged along a first direction on a substrate;
forming a plurality of gate lines arranged along a second direction perpendicular to the first direction on the substrate to define a plurality of pixel regions, each of the gate lines having at least one first set of protrusions and depressions extending in a direction substantially perpendicular to a surface of the substrate on which the gate lines are arranged;
forming a driving device within each of the pixel regions;
forming a pixel electrode within each of the pixel regions; and
forming a metal layer overlapping each of the gate lines to create a storage capacitor, the metal layer having at least one set of protrusions and depressions extending in a direction substantially perpendicular to a surface of the substrate on which the metal layer is arranged.
21. The method according to claim 20 , wherein the first set of protrusions and depressions is arranged along the second direction of the gate lines.
22. The method according to claim 21 , wherein the first set of protrusions and depressions are arranged along the first direction of the data lines.
23. The method according to claim 21 , wherein the first set of protrusions and depressions are arranged having a lattice shape.
24. The method according to claim 20 , wherein the driving device includes a thin film transistor.
25. The method according to claim 24 , wherein the thin film transistor includes:
a gate electrode on the substrate;
a gate insulating layer over the substrate;
a semiconductor layer on the gate insulating layer; and
a source electrode and a drain electrode on the semiconductor layer.
26. The method according to claim 25 , further comprising forming at least one first protrusion/depression layer on the substrate to form the first set of protrusions and depressions.
27. The method according to claim 26 , wherein the first protrusion/depression layer includes metal material.
28. The method according to claim 26 , wherein the first protrusion/depression layer includes insulation material.
29. The method according to claim 25 , further comprising forming at least one first groove within a surface of the substrate to form the first set of protrusions and depressions.
30. The method according to claim 25 , wherein the metal layer is disposed on the gate insulating layer.
31. The method according to claim 30 , wherein the metal layer includes metal material similar to metal material of the source electrode and the drain electrode.
32. The method according to claim 25 , further comprising forming a second set of protrusions and depressions in the semiconductor layer.
33. The method according to claim 32 , wherein the second set of protrusions and depressions is formed along the source electrode and the drain electrode.
34. The method according to claim 33 , wherein the second set of protrusions and depressions is arranged in a lattice shape.
35. The method according to claim 32 , further comprising forming a second protrusion/depression layer in the substrate to form the second set of protrusions and depressions.
36. The method according to claim 35 , wherein the second protrusion/depression layer includes insulation material.
37. The method according to claim 35 , wherein the second protrusion/depression layer includes metal material.
38. The method according to claim 32 , further comprising forming a second groove in a surface of the substrate to form the second set of protrusions and depressions.