Capacitive acceleration sensor
View Patent ↗A capacitive acceleration sensor includes a non-single-crystal-silicon-based substrate, a polysilicon beam structure having a movable section that includes a movable electrode, a polysilicon supporter positioned on the non-single-crystal-silicon-based substrate for fixing the beam structure and forming a distance between the beam structure and the non-single-crystal-silicon-based substrate, a stationary electrode positioned on the non-single-crystal-silicon-based substrate and opposite to the movable section of the beam structure, and a thin film transistor (TFT) control circuit positioned on the non-single-crystal-silicon-based substrate. The stationary electrode and the movable electrode constitute a plate capacitor, and the TFT control circuit is electrically connected to the plate capacitor.
1. A capacitive acceleration sensor comprising:
a non-single-crystal-silicon-based substrate;
a polysilicon beam structure having a movable section, the movable section comprising a movable electrode;
a polysilicon supporter positioned on the non-single-crystal-silicon-based substrate for fixing the beam structure and forming a distance between the beam structure and the non-single-crystal-silicon-based substrate;
a stationary electrode positioned on the non-single-crystal-silicon-based substrate and opposite to the movable section of the beam structure, the stationary electrode and the movable electrode constituting a plate capacitor; and
a thin film transistor (TFT) control circuit positioned on the non-single-crystal-silicon-based substrate and electrically connected to the plate capacitor.
2. The capacitive acceleration sensor of claim 1 wherein the non-single-crystal-silicon-based substrate is a glass substrate.
3. The capacitive acceleration sensor of claim 2 wherein the TFT control circuit is a low temperature polysilicon TFT control circuit.
4. The capacitive acceleration sensor of claim 1 wherein the non-single-crystal-silicon-based substrate is a quartz substrate.
5. The capacitive acceleration sensor of claim 4 wherein the TFT control circuit is a high temperature polysilicon TFT control circuit.
6. The capacitive acceleration sensor of claim 1 wherein the stationary electrode comprises aluminum (Al), titanium, (Ti), platinum (Pt), or alloys.
7. The capacitive acceleration sensor of claim 1 wherein the beam structure and the supporter are formed simultaneously.
8. The capacitive acceleration sensor of claim 1 wherein the movable electrode comprises doped polysilicon or a conductive material.
9. The capacitive acceleration sensor of claim 1 wherein the non-single-crystal-silicon-based substrate further comprises a thin film transistor display region for displaying a variation detected by the capacitive acceleration sensor.
10. A capacitive acceleration sensor comprising:
an insulating substrate;
a cantilever beam structure positioned on the insulating substrate having a movable section, the movable section comprising a movable electrode;
a stationary electrode positioned on the insulating substrate and opposite to the movable section of the cantilever beam structure, the stationary electrode and the movable electrode constituting a plate capacitor; and
a thin film transistor control circuit positioned on the insulating substrate and electrically connected to the plate capacitor, the thin film transistor control circuit being a low temperature polysilicon thin films transistors control circuit.
11. The capacitive acceleration sensor of claim 10 wherein the stationary electrode comprises aluminum (Al), titanium (Ti), platinum (Pt), or alloys.
12. The capacitive acceleration sensor of claim 10 wherein the cantilever beam structure comprises polysilicon.
13. The capacitive acceleration sensor of claim 10 wherein the movable electrode comprises doped polysilicon or a conductive material.
14. The capacitive acceleration sensor of claim 10 wherein the insulating substrate is a glass substrate.
15. The capacitive acceleration sensor of claim 10 wherein the thin film transistor control circuit is electrically connected to the plate capacitor via a flexible printed circuit (FPC) board.
16. The capacitive acceleration sensor of claim 10 wherein the insulating substrate further comprises a thin film transistor display region for displaying a variation detected by the capacitive acceleration sensor.
17. A capacitive acceleration sensor comprising:
an insulating substrate;
a cantilever beam structure positioned on the insulating substrate having a movable section, the movable section comprising a movable electrode;
a stationary electrode positioned on the insulating substrate and opposite to the movable section of the cantilever beam structure, the stationary electrode and the movable electrode constituting a plate capacitor; and
a thin film transistor control circuit positioned on the insulating substrate and electrically connected to the plate capacitor, the thin film transistor control circuit being a high temperature polysilicon thin film transistor control circuit.
18. The capacitive acceleration sensor of claim 17 wherein the stationary electrode comprises aluminum (Al), titanium (Ti), platinum (Pt), or alloys.
19. The capacitive acceleration sensor of claim 17 wherein the cantilever beam structure comprises polysilicon.
20. The capacitive acceleration sensor of claim 17 wherein the movable electrode comprises doped polysilicon or a conductive material.
21. The capacitive acceleration sensor of claim 17 wherein the insulating substrate is a quartz substrate.
22. The capacitive acceleration sensor of claim 17 wherein the thin film transistor control circuit is electrically connected to the plate capacitor via a flexible printed circuit (FPC) board.
23. The capacitive acceleration sensor of claim 17 wherein the insulating substrate further comprises a thin film transistor display region for displaying a variation detected by the capacitive acceleration sensor.