Thin film transistor and fabricating method thereof
View Patent ↗A method for fabricating a thin film transistor (TFT) is described. A MoNb gate is formed on a substrate, and an insulating layer is formed on the substrate covering the gate. A channel layer is formed on the insulating layer above the gate, and a source/drain is formed on the channel layer to constitute a TFT. Since the gate is constituted of a MoNb layer, the contact resistance thereof can be reduced.
1. A method for fabricating a thin film transistor (TFT), comprising:
forming a gate on a substrate, the gate comprising a composite layer of MoNb/AlNd or MoNb/AlNd/MoNb;
forming an insulating layer over the substrate covering the gate;
forming a channel layer on the insulating layer above the gate; and
forming a source/drain on the channel layer.
2. The method of claim 1 , wherein an amount of niobium in the MoNb alloy is less than 10%.
3. The method of claim 1 , wherein the source/drain comprises a single MoNb layer or a composite layer of MoNb/AlNd or MoNb/AlNd/MoNb.
4. The method of claim 3 , wherein an amount of niobium in the MoNb alloy is less than 10%.
5. A method for fabricating a thin film transistor (TFT), comprising:
forming a gate on a substrate;
forming an insulating layer over the substrate covering the gate;
forming a channel layer on the insulating layer above the gate; and
forming a source/drain on the channel layer, the source/drain comprising a composite layer of MoNb/AlNd or MoNb/AlNd/MoNb.
6. The method of claim 5 , wherein an amount of niobium in the MoNb alloy is less than 10%.
7. A thin film transistor (TFT), comprising:
a gate on a substrate, the gate comprising a composite layer of MoNb/AlNd or MoNb/AlNd/MoNb;
an insulating layer over the substrate covering the gate;
a channel layer on the insulating layer above the gate; and
a source/drain on the channel layer.
8. The TFT of claim 7 , wherein an amount of niobium in the MoNb alloy is less than 10%.
9. The TFT of claim 7 , wherein the source/drain comprises a single MoNb layer or a composite layer of MoNb/AlNd or MoNb/AlNd/MoNb.
10. The TFT of claim 9 , wherein an amount of niobium in the MoNb alloy is less than 10%.
11. A thin film transistor (TFT), comprising:
a gate on a substrate;
an insulating layer over the substrate covering the gate;
a channel layer on the insulating layer above the gate; and
a source/drain on the channel layer, the source/drain comprising a composite layer of MoNb/AlNd or MoNb/AlNd/MoNb.
12. The method of claim 11 , wherein an amount of niobium in the MoNb alloy is less than 10%.