IP Library Granted Patent US 6,942,549
Granted Patent B2
US 6,942,549 · App. 10/605,828 · Granted Sep 13, 2005

Two-sided chemical mechanical polishing pad for semiconductor processing

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Quick Facts
Patent No.
US 6,942,549
App. No.
10/605,828
Granted
Sep 13, 2005
Kind
B2
Abstract

A chemical mechanical polishing (CMP) pad includes a unitary body having a first side and a second side, the first side having a plurality of holes formed therein, and the second side having a plurality of grooves formed therein. Each of the plurality of holes in the first side is aligned with one of the plurality of grooves in the second side.

Claims (24)

1. A chemical mechanical polishing (CMP) pad, comprising:

a unitary body having a first side and a second side, said second side being a polishing side;

said first side having a plurality of holes formed therein, arranged into a concentric circular configuration; and

said second side having a plurality of grooves formed therein, arranged into a concentric circular configuration;

wherein each of said plurality of holes in said first side is aligned with one of said plurality of grooves in said second side;

the depth of each of said plurality of holes extends up to said one of said plurality of grooves; and

each of said holes are sized in a manner so as not to exceed the width of a corresponding groove aligned therewith.

2. A chemical mechanical polishing (CMP) pad assembly, comprising:

a sub pad attached to the upper surface of a support turntable;

a CMP pad having unitary body with a first side and a second side, said second side being a polishing side, wherein said first side is in contact with said sub pad;

said first side having a plurality of holes formed therein, arranged into a concentric circular configuration; and

said second side having a plurality of grooves formed therein, arranged into a concentric circular configuration

wherein each of said plurality of holes in said first side is aligned with one of said plurality of grooves in said second side;

the depth of each of said plurality of holes extends up to said one of said plurality of grooves; and

each of said holes are sized in a manner so as not to exceed the width of a corresponding groove aligned therewith.

3. A chemical mechanical polishing (CMP) assembly, comprising:

a rotatable pressure block for securing a semiconductor wafer therein;

a support turntable having a sub pad attached to the upper surface thereof;

a CMP pad having unitary body with a first side and a second side, wherein said first side is in contact with said sub pad and said second side is disposed so as to come into contact with said semiconductor wafer during a polishing operation; and

at least one supply line for dispensing CMP fluid for said polishing operation;

wherein said first side of said CMP pad has a plurality of holes formed therein, arranged into a concentric circular configuration, and said second side of said CMP pad has a plurality of grooves formed therein, arranged into a concentric circular configuration; and

wherein each of said plurality of holes in said first side is aligned with one of said plurality of grooves in said second side;

the depth of each of said plurality of holes extends up to said one of said plurality of grooves; and

each of said holes are sized in a manner so as not to exceed the width of a corresponding groove aligned therewith.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 17, 2013
From: INTERNATIONAL BUSINESS MACHINES CORPORATION
To: INTELLECTUAL DISCOVERY, INC.
Reel/Frame 030628/0554 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 29, 2003
From: KHOURY, RAYMOND M.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 014085/0143 →