Semiconductor integrated circuit device
View Patent ↗A semiconductor integrated circuit device is comprised of an amplifier circuit having first and second PMOS and NMOS transistors. The first PMOS transistor has a gate electrode and a drain electrode connected together. The second PMOS transistor has a gate electrode connected to the gate electrode of the first PMOS transistor and a course electrode connected to a course electrode of the first PMOS transistor. The first NMOS transistor has a drain electrode connected to the drain electrode of the first PMOS transistor and a gate electrode sat as a first input terminal. The second NMOS transistor has a drain electrode connected to a drain electrode of the second PMOS transistor, a source electrode connected to a sourse electrode of the first NMOS transistor, and a gate electrode sat as a second input terminal. At least one of the first NMOS transistor and the second NMOS transistor is comprised of a buried channel transistor.
1. A semiconductor integrated circuit device comprising: an amplifier circuit comprised of a first PMOS transistors having a gate electrode and a drain electrode connected together, a second PMOS transistor having a gate electrode connected to the gate electrode of the first PMOS transistor and a source electrode connected to a source electrode of the first PMOS transistor, a first NMOS transistor having a drain electrode connected to the drain electrode of the first PMOS transistor and a gate electrode set as a first input terminal, and second NMOS transistor having a drain electrode connected to a drain electrode of the second PMOS transistor, a source electrode connected to a source electrode of the first NMOS transistor, and a gate electrode set as a second input terminal, at least one of the first NMOS transistor and the second NMOS transistor being comprised of a buried channel transistor; wherein the semiconductor integrated circuit device comprises an A/D converter.
2. A semiconductor integrated circuit device comprising: an amplifier circuit comprised of a first PMOS transistor having a gate electrode and a drain electrode connected together, a second PMOS transistor having a gate electrode connected to the gate electrode of the first PMOS transistor and a sourse electrode connected to a sourse electrode of the first PMOS transistor,a first NMOS transistor having a drain electrode connected to the drain electrode of the first PMOS transistor and a gate electrode set a first input terminal, and a second NMOS transistor having a drain electrode connected to a drain electrode of the second PMOS transistor, a sourse electrode connected to a sourse electrode of the first NMOS transistor, and a gate electrode set as a second terminal, at least one of the first NMOS transistor and the second NMOS transistor being comprised of a buried channel transistor; wherein the semiconductor integrated circuit device comprises an D/A converter.
3. A semiconductor integrated circuit device comprising: an amplifier circuit comprised of a first surface channel PMOS transistor having a gate electrode and a drain electrode connected together, a second surface channel PMOS transistor having a gate electrode connected to the gate electrode of the first surface channel PMOS transistor and a source electrode connected to a sourse electrode of the first surface channel PMOS transistor, a first buried channel NMOS transistor having a drain electrode connected to the drain electrode of the first surface channel PMOS transistor and a gate electrode set as a first input terminal, and a second buried channel NMOS transistor having a drain electrode connected to a drain electrode of the second surface channel PMOS transistor, a sourse electrode connected to a sourse electrode of the first buried channel NMOS transistor, and a gate electrode set as a second input terminal; wherein the semiconductor integrated circuit device comprises a A/D converter.
4. A semiconductor integrated circuit device according to claim 3 ; wherein the gate electrode of at least one of the first buried channel NMOS transistor and second buried channel NMOS transistor is formed of P-type polycrystalline silicon.
5 .A semiconductor integrated circuit device according to claim 3 ; wherein the gate electrode of each of the first buried channel NMOS transistor and the second buried channel NMOS transistor is formed of P-type polycrystalline silicon.
6. A semiconductor integrated circuit device comprising: an amplifier circuit comprised of a first surface channel PMOS transistor having a gate electrode and a drain electrode connected together, a second surface channel PMOS transistor having a gate electrode connected to the gate electrode of the first surface channel PMOS transistor and a source electrode connected to a sourse electrode of the first surface channel PMOS transistor, a first buried channel NMOS transistor having a drain electrode connected to the drain electrode of the first surface channel PMOS transistor and a gate electrode set as a first input terminal, and a second buried channel NMOS transistor having a drain electrode connected to a drain electrode of the second surface channel PMOS transistor, a source electrode connected to a source electrode of the first buried channel NMOS transistor, and a gate electrode sat as a second input terminal, wherein the semiconductor integrated circuit device comprises a D/A converter.
7. A semiconductor integrated circuit device according to claim 3 ; wherein the gate electrode of each of the first buried channel NMOS transistor and the second buried channel NMOS transistor comprises a P-type gate electrode.