Pseudomorphic layer in tunnel junction VCSEL
View Patent ↗A vertical cavity surface emitting laser (VCSEL) includes an indium-based semiconductor alloy substrate, a first mirror stack over the substrate, an active region having a plurality of quantum wells over the first mirror stack, a tunnel junction over the active region, the tunnel junction including a p-doped pseudomorphically strained layer of a compound selected from the group consisting of Al-rich InAlAs, AlAs, Ga-rich InGaAs, GaAs and combinations thereof, and a second mirror stack over the tunnel junction. The pseudomorphically strained layer can be used to form a tunnel junction with a n-doped layer of InP or AlInAs, or with a lower bandgap material such as AlInGaAs or InGaAsP. Such tunnel junctions are especially useful for a long wavelength VCSEL.
1. A vertical cavity surface emitting laser, comprising:
an indium-based semiconductor alloy substrate;
a first mirror stack over the substrate;
an active region having a plurality of quantum wells over the first mirror stack;
a tunnel junction over the active region, the tunnel junction having an n-side
including an n-doped layer, and a p-side including a p-doped pseudomophically strained layer of a compound selected from the group consisting of Al-rich 1nA1As, A1As, Ga-rich InGaAs, GaAs and combinations thereof, wherein the p-doped layer has an in-plane tensile strain so as to increase a carrier mobility in the tunnel junction and a hydrostatic strain so as to reduce a bandgap of the p-side layer; and
a second mirror stack over the tunnel junction.
2. A vertical cavity surface emitting laser according to claim 1 , wherein the p-side of the tunnel junction further includes a lattice matched Zn doped layer.
3. A vertical cavity surface emitting laser according to claim 1 , further including an n-type spacer adjacent the active region, and wherein the first mirror stack is an n-type DBR.
4. A vertical cavity surface emitting laser according to claim 1 , further including an n-type spacer adjacent the tunnel junction, and wherein the second mirror stack is an n-type DBR.
5. A vertical cavity surface emitting laser according to claim 1 , further including:
an n-type bottom spacer adjacent the active region, and wherein the first mirror stack is an n-type DBR; and
an p-type top spacer adjacent the tunnel junction,
wherein the first and second mirror stacks are each an n-type DBR.
6. A vertical cavity surface emitting laser according to claim 1 , wherein the p-doped pseudomorphically strained layer is grown by MOCVD or MBE.
7. A vertical cavity surface emitting laser according to claim 6 , wherein the p-doped pseudomorphically strained layer is doped with carbon with a concentration greater than 1×10 19 cm −3 .
8. A vertical cavity surface emitting laser according to claim 1 , wherein the active region includes one of InGaAsP and AlInGaAs.
9. A vertical cavity surface emitting laser according to claim 1 , wherein the tunnel junction further includes an n-doped layer of a compound in the group consisting of InP, AlInAs, AIInGaAs, or InGaAsP.
10. A vertical cavity surface emitting laser according to claim 1 , wherein the first and second mirror stacks are lower and upper mirror stacks, respectively.
11. A tunnel junction having a p-doped pseudomorphically strained layer, wherein the p-doped pseudomorphically strained layer includes a compound in the group consisting of Al-rich InA1As, A1As, Ga-rich InGaAs, GaAs and combinations thereof and, wherein the p-doped strained layer has an in-plane tensile strain so as to increase a can'ier mobility in the tunnel junction and a hydrostatic strain so as to reduce a bandgap of a p-side layer of the tunnel junction.
12. A tunnel jtlnction according to claim 11 , further including a lattice matched Zn doped layer.
13. A tunnel junction according to claim 11 , wherein the p-doped pseudomorphically strained layer is doped with carbon with a concentration greater than 1×10 19 cm −3 .
14. A tunnel junction according to claim 11 , further including an n-doped layer of a compound in the group consisting of InP, AlInAs, AlInGaAs, and InGaAsP.
15. A tunnel junction according to claim 14 , wherein the n-doped layer is doped with a concentration greater than 5×10 19 cm −3 .
16. A tunnel junction according to claim 14 , wherein the n-doped layer is less than about 10 nanometers thick.
17. A tunnel junction according to claim 14 , wherein the n-doped layer is doped with a concentration greater than 5×10 19 cm −3 and the n-doped layer is less than about 10 nanometers thick.