Thin film transistor device and method of manufacturing the same, thin film transistor substrate and display having the same
View Patent ↗In a method for manufacturing a TFT device, a metal thin film is formed on a gate insulation film. Patterning is performed to remove the metal thin film on a semiconductor layer, and phosphorous ions are implanted using the patterned metal thin film as a mask to form the source and drain regions. The patterned metal thin film is further patterned to form a gate electrode of an n-type TFT. Phosphorous ions are implanted using the gate electrode as a mask to form LDD regions between the source and drain regions and a channel region.
1. A substrate for a thin film transistor, comprising:
a plurality of bus lines formed on a substrate such that they intersect each other with an insulation film interposed;
pixel regions provided in the form of a matrix in a display area on the substrate;
and a thin film transistor device formed at a peripheral circuit provided around the display area;
wherein the thin film transistor device includes:
a first thin film transistor of a first conductivity type including a semiconductor layer formed on the substrate, a first gate insulation film formed on the semiconductor layer, a second gate insulation film formed on the first gate insulation film, and a first gate electrode formed on the second gate insulation film, a low density impurity region being formed between source and drain regions and a channel region of the semiconductor layer; and
a second thin film transistor including the semiconductor layer, the first gate insulation film, a second gate electrode formed on the first gate insulation film, and an insulation film formed on the second gate electrode and being of the same material as the second gate insulation film.
2. A display comprising:
a substrate having thin film transistors as switching elements,
wherein the substrate includes:
a plurality of bus lines formed on the substrate such that they intersect each other with an insulation film interposed;
pixel regions provided in the form of a matrix in a display area on the substrate;
and a thin film transistor device formed at a peripheral circuit provided around the display area;
wherein the thin film transistor device includes:
a first thin film transistor of a first conductivity type including a semiconductor layer formed on the substrate, a first gate insulation film formed on the semiconductor layer, a second gate insulation film formed on the first gate insulation film, and a first gate electrode formed on the second gate insulation film, a low density impurity region being formed between source and drain regions and a channel region of the semiconductor layer; and
a second thin film transistor including the semiconductor layer, the first gate insulation film, a second gate electrode formed on the first gate insulation film, and an insulation film formed on the second gate electrode and being of the same material as the second gate insulation film.
3. A substrate for a thin film transistor according to claim 1 , further comprising:
a third thin film transistor of a second conductivity type including the semiconductor layer, the first gate insulation film, the second gate insulation film, and the first gate electrode.
4. A display according to claim 2 , wherein the substrate further comprises:
a third thin film transistor of a second conductivity type including the semiconductor layer, the first gate insulation film, the second gate insulation film, and the first gate electrode.