Termination structure for MOSgated power devices
View Patent ↗The termination of a MOSgated device is formed by a trench bevel which surrounds the active device area. The trench bevel has flat walls which extend into and through the epitaxial layer containing the active area which has a lateral extend equal to or less than the thickness of the epitaxial layer. The surface of the bevel is coated with a resistive film, preferably, an amorphous silicon which connects the device source to the device drain to cause the electric field in the epitaxial silicon to the linearly distributed over the length of the bevel.
1. A termination for a MOSgated device; said MOSgated device having an epitaxial junction-receiving layer of a given thickness; said epitaxial layer containing an active area and a termination area laterally adjacent said active area; said termination area including a bevel surface having a first edge adjacent to said active area and a second edge adjacent an outer edge of said device; said bevel surface coated with a resistive film for at least approximately linearly distributing the electric field within and along the termination area within said epitaxial layer.
2. The termination claim 1 , wherein said termination area has a lateral dimension which is about equal to or less than the thickness of said epitaxial layer.
3. The termination of claim 2 , wherein said resistive film is of a material selected from the group consisting of nitrides, oxides, silicon carbide and semi-insulating films including amorphorus silicon, semi-insulating polycrystalline silicon, and silicon-rich nitride.
4. The termination of claim 2 , wherein said film is amorphous silicon.
5. The termination of claim 4 , wherein said MOSgated device has a source electrode on its top surface and a drain electrode on its bottom surface; said resistive film connecting said source electrode to said drain electrode.
6. The termination at claim 2 , wherein said MOSgated device has a source electrode on its top surface and a drain electrode on its bottom surface; said resistive film connecting said source electrode to said drain electrode.
7. The termination of claim 1 , wherein said resistive film is of a material selected from the group consisting of nitrides, oxides, silicon carbide and semi-insulating films including amorphorus silicon, semi-insulating polycrystalline silicon, and silicon-rich nitride.
8. The termination of claim 7 , wherein said MOSgated device has a source electrode on its top surface and a drain electrode on its bottom surface; said resistive film connecting said source electrode to said drain electrode.
9. The termination of claim 1 , wherein said film is amorphous silicon.
10. The termination of claim 1 , wherein said MOSgated device has a source electrode on its top surface and a drain electrode on its bottom surface; said resistive film connecting said source electrode to said drain electrode.