Manufacturing method for a semiconductor device
View Patent ↗In a method for manufacturing a semiconductor device, a first silicon oxide film is formed on a semiconductor substrate. The first silicon oxide film is nitrided so that silicon oxynitride forms at an interface between the semiconductor substrate and the first silicon oxide film. The first silicon oxide film is removed from a portion of the semiconductor substrate using a chemical containing at least an ammonia-hydrogen peroxide solution so that the silicon oxynitride formed at the interface between the portion of the semiconductor substrate and the first silicon oxide film is completely removed. Thereafter, a second silicon oxide film is formed in the portion of the semiconductor substrate from which the first silicon oxide film and the silicon oxynitride have been removed.
1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a first silicon oxide film having a first thickness on a silicon substrate;
nitriding the first silicon oxide film so that silicon oxynitride forms at an interface between the silicon substrate and the first silicon oxide film;
removing the first silicon oxide film from a part of the silicon substrate using a chemical containing at least an ammonia-hydrogen peroxide solution so that the silicon oxynitride formed at the interface between the part of the silicon substrate and the first silicon oxide film is completely removed; and
forming a second silicon oxide film in at least a portion of the part of the silicon substrate from which the first silicon oxide film and the silicon oxynitride have been removed, the second silicon oxide film having a second thickness different from the first thickness.
2. A method for manufacturing a semiconductor device according to claim 1 ; wherein the nitriding step includes the step of using an ammonia gas.
3. A method for manufacturing a semiconductor device, comprising the steps of:
forming a first silicon oxide film having a first thickness on a silicon substrate;
nitriding the first silicon oxide film so that silicon oxynitride forms at an interface between the silicon substrate and the first silicon oxide film;
removing the first silicon oxide film from a part of the silicon substrate;
washing the part of the silicon substrate from which the first silicon oxide film has been removed using a chemical containing at least an ammonia-hydrogen peroxide solution so that the silicon oxynitride formed at the interface between the part of the silicon substrate and the first silicon oxide film is completely removed; and
forming a second silicon gate oxide film in at least a portion of the part of the silicon substrate from which the first silicon oxide film and the silicon oxynitride are removed, the second silicon oxide film having a second thickness different from the first thickness.
4. A method for manufacturing a semiconductor device according to claim 3 ; wherein the nitriding step includes the step of using an ammonia gas.
5. A method for manufacturing a semiconductor device, comprising the steps of:
forming a first silicon oxide film on a semiconductor substrate;
subjecting the first silicon oxide film to an atmosphere containing at least an ammonia gas so that silicon oxynitride forms at an interface between the semiconductor substrate and the first silicon oxide film;
completely removing the first silicon oxide film and the corresponding silicon oxynitride from a portion of the semiconductor substrate; and
forming a second silicon oxide film on the portion of the semiconductor substrate from which the first silicon oxide film and the silicon oxynitride have been completely removed.
6. A method for manufacturing a semiconductor device according to claim 5 ; wherein the removing step comprises a first step of completely removing the first silicon oxide film from the portion of the semiconductor substrate, and a second step of washing the portion of the semiconductor substrate from which the first silicon oxide film has been removed using a chemical containing at least an ammonia-hydrogen peroxide solution to completely remove the silicon oxynitride formed at the interface between the portion of the semiconductor substrate and the first silicon oxide film.
7. A method for manufacturing a semiconductor device according to claim 6 ; wherein the first step comprises the step of using an hydrofluoric acid to completely remove the first silicon oxide film from the portion of the semiconductor substrate.
8. A method for manufacturing a semiconductor device according to claim 5 ; wherein the removing step comprises the step of removing the first silicon oxide film from the portion of the semiconductor substrate using a chemical containing at least an ammonia-hydrogen peroxide solution so that the silicon oxynitride formed at the interface between the portion of the semiconductor substrate and the first silicon oxide film is completely removed.
9. A method for manufacturing a semiconductor device according to claim 5 ; wherein the nitriding step includes the step of using an ammonia gas.
10. A method for manufacturing a semiconductor device according to claim 5 ; wherein the semiconductor device comprises a MOS transistor; and wherein the first silicon oxide film comprises a gate oxide film of the MOS transistor.