IP Library Granted Patent US 7,096,568
Granted Patent B1
US 7,096,568 · App. 10/616,735 · Granted Aug 29, 2006

Method of manufacturing a microcomponent assembly

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,096,568
App. No.
10/616,735
Granted
Aug 29, 2006
Kind
B1
Abstract

A new process and structure for microcomponent interconnection utilizing a post-assembly activated junction compound. In one embodiment, first and second microcomponents having respective first and second contact areas are provided. A junction compound is formed on one of the first and second contact areas, and the first and second contact areas are positioned adjacent each other on opposing sides of the junction compound. The junction compound is then activated to couple the first and second microcomponents.

Claims (48)

1. A method of manufacturing a microcomponent assembly, comprising:

providing a first microcomponent having a first contact area and having a first feature dimension less than about 50 microns;

providing a second microcomponent having a second contact area and having a second feature dimension less than about 50 microns;

forming a junction compound on at least one of the first and second contact areas;

positioning the first and second contact areas adjacent each other on opposing sides of the junction compound; and

activating the junction compound to couple the first and second microcomponents.

2. The method recited in claim 1 wherein the first and second feature dimensions are each less than about 25 microns.

3. The method recited in claim 1 wherein the junction compound comprises indium.

4. The method recited in claim 1 wherein activating the junction compound electrically couples the first and second microcomponents.

5. The method recited in claim 1 wherein the junction compound is formed on both of the first and second contact areas.

6. The method recited in claim 1 wherein the junction compound is formed by sputtering.

7. The method recited in claim 1 wherein the junction compound is formed by a method selected from the group consisting of:

electroplating;

chemical vapor deposition (CVD);

plasma enhanced CVD;

physical vapor deposition;

ionized metal plasma deposition; and

atomic layer deposition.

8. The method recited in claim 1 wherein activating the junction compound comprises heating the junction compound.

9. The method recited in claim 8 wherein the junction compound is heated by heating the first and second microcomponents in a temperature-controlled process chamber.

10. The method recited in claim 8 wherein the junction compound is heated by exposing the junction compound to a laser.

11. The method recited in claim 8 wherein at least one of the first and second microcomponents comprises a heater element proximate the junction compound and the junction compound is heated by operating the heater element.

12. The method recited in claim 8 wherein the junction compound is heated by thermal energy transferred from a gripping mechanism to the junction compound.

13. The method recited in claim 1 wherein at least one of the first and second microcomponents is a nanocomponent.

14. The method recited in claim 1 wherein one of the first and second microcomponents is a substrate.

15. The method recited in claim 1 further comprising:

providing a substrate having a third contact area;

forming an additional junction compound on at least one of the third contact area and a fourth contact area of one of the first and second microcomponents;

positioning the third and fourth contact areas adjacent opposing sides of the additional junction compound; and

activating the additional junction compound to couple the one of the first and second microcomponents having the fourth contact area to the substrate.

16. The method recited in claim 15 wherein activating the junction compound between the first and second contact areas includes substantially simultaneously activating the additional junction compound between the third and fourth contact areas.

17. The method recited in claim 15 wherein the third and fourth contact areas are positioned before the additional junction compound is activated.

18. The method recited in claim 1 wherein activating the junction compound to couple the first and second microcomponents includes activating the junction compound to mechanically and electrically couple the first and second microcomponents.

19. The method recited in claim 18 wherein activating the junction compound to mechanically and electrically couple the first and second microcomponents includes activating the junction compound via thermal energy.

20. The method recited in claim 18 wherein at least one of the first and second microcomponents comprises a heater element, and wherein activating the junction compound via thermal energy includes operating the heater element.

21. A method of manufacturing a microcomponent assembly, comprising:

providing a first microcomponent having a first contact area;

providing a second microcomponent having a second contact area, wherein at least one of the first and second microcomponents has at least one feature dimension that is less than about 50 microns;

forming a junction compound on at least one of the first and second contact areas; and

coupling the first and second microcomponents by:

positioning the first and second contact areas adjacent each other on opposing sides of the junction compound; and

activating the junction compound.

22. The method recited in claim 21 wherein activating the junction compound occurs before positioning the first and second contact areas adjacent each other on opposing sides of the activated junction compound.

23. The method recited in claim 21 wherein activating the junction compound occurs after positioning the first and second contact areas adjacent each other on opposing sides of the un-activated junction compound.

24. The method recited in claim 21 wherein the junction compound comprises indium.

25. The method recited in claim 21 wherein coupling the first and second microcomponents by the positioning and the activating includes mechanically and electrically coupling the first and second microcomponents.

26. The method recited in claim 21 wherein at least one of the first and second microcomponents comprises a heater element and activating the junction compound comprises heating the junction compound by operating the heater element.

27. The method recited in claim 21 wherein activating the junction compound comprises heating the junction compound by thermal energy transferred from a gripping mechanism to the junction compound.

Assignments (4)
NUNC PRO TUNC ASSIGNMENT EFF DATE 4/01/07 Recorded May 30, 2007
From: ZYVEX CORPORATION
To: ZYVEX LABS, LLC
Reel/Frame 019353/0470 →
RELEASE Recorded Jan 5, 2007
From: SILICON VALLEY BANK
To: ZYVEX CORPORATION
Reel/Frame 018777/0003 →
SECURITY INTEREST Recorded May 25, 2006
From: ZYVEX CORPORATION
To: SILICON VALLEY BANK
Reel/Frame 017921/0368 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 30, 2003
From: NILSEN, ERIK; ELLIS, MATTHEW D.; GOLDSMITH, CHARLES L.; LEE, JEONG BONG; HUANG, XIAOJUN; NALLANI, ARUN KUMAR; KIM, KABSEOG; SKIDMORE, GEORGE D.
To: ZYVEX CORPORATION
Reel/Frame 014642/0479 →