Wavelength-converting casting composition and white light-emitting semiconductor component
View Patent ↗The wavelength-converting casting composition is based on a transparent epoxy casting resin with a luminous substance admixed. The composition is used in an electroluminescent component having a body that emits ultraviolet, blue or green light. An inorganic luminous substance pigment powder with luminous substance pigments is dispersed in the transparent epoxy casting resin. The luminous substance is a powder of Ce-doped phosphors and the luminous substance pigments have particle sizes ≦20 μm and a mean grain diameter d 50 ≦5 μm.
1. Light emitting semiconductor body for use in an LED housing,
said semiconductor body being provided with a layer comprising a wavelength-converting casting composition; and
said casting composition comprising luminous substance particles;
said luminous substance particles comprising luminous substance pigments selected from the group consisting of garnets doped with rare earths; thiogallates doped with rare earths; aluminates doped with rare earths; and orthohsilicates doped with rare earths; and
said luminous substance pigments having grain sizes ≦20 μm and a median diameter ≦5 μm, wherein 50% of the pigments have a grain diameter greater than said median diameter and 50% of the pigments have a grain diameter less than said median diameter.
2. Semiconductor body according to claim 1 , wherein the median diameter of said luminous substance pigments is between 1 and 2 micrometers.
3. Semiconductor body according to claim 1 , wherein said luminous substance pigments contain Ce-doped garnet material.
4. Semiconductor body according to claim 1 , wherein said luminous substance pigments contain YAG:Ce material.
5. Semiconductor body according to claim 1 , wherein the iron content in the casting composition is ≦20 ppm.
6. Semiconductor body according to claim 1 , wherein the luminous substance pigments are provided with a silicone coating.
7. Semiconductor body according to claim 1 , wherein said luminous substance pigments convert radiation from the ultraviolet, blue or green spectral range into light with a relatively longer wavelength.
8. Semiconductor body according to claim 1 , wherein said layer containing light-scattering particles.
9. Semiconductor body according to claim 1 , wherein said semiconductor body is adapted to emit radiation in a blue spectral range having a maximum luminescence intensity at a wavelength between 420 nm and 460 nm.
10. Semiconductor body according to claim 1 , wherein the casting composition further comprises a transparent resin.
11. Semiconductor body according to claim 10 , wherein the transparent resin is an epoxy resin.
12. Light emitting semiconductor body for use in an LED housing,
said semiconductor body being provided with a layer comprising a wavelength-converting casting composition; and
said casting composition comprising luminous substance particles;
said luminous substance particles comprising luminous substance pigments from Ce-doped phosphors; and
said luminous substance pigments having grain sizes ≦20 μm, and a median diameter ≦5 μm, wherein 50% of the pigments have a grain diameter greater than said median diameter and 50% of the pigments have a grain diameter less than said median diameter.
13. Semiconductor body according to claim 12 , wherein the median diameter of said luminous substance pigments is between 1 and 2 micrometers.
14. Semiconductor body according to claim 12 , wherein the iron content in the casting composition is ≦20 ppm.
15. Semiconductor body according to claim 12 , wherein the luminous substance pigments are provided with a silicone coating.
16. Semiconductor body according to claim 12 , wherein said luminous substance pigments convert radiation from the ultraviolet, blue or green spectral range into light with a relatively longer wavelength.
17. Semiconductor body according to claim 12 , wherein said layer containing light-scattering particles.
18. Semiconductor body according to claim 12 , wherein said semiconductor body is adapted to emit radiation in a blue spectral range having a maximum luminescence intensity at a wavelength between 420 nm and 460 nm.
19. Semiconductor body according to claim 12 , wherein the casting composition further comprises a transparent resin.
20. Semiconductor body according to claim 19 , wherein the transparent resin is an epoxy resin.