IP Library Granted Patent US 7,229,570
Granted Patent B2
US 7,229,570 · App. 10/616,914 · Granted Jun 12, 2007

Slurry for chemical mechanical polishing

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Quick Facts
Patent No.
US 7,229,570
App. No.
10/616,914
Granted
Jun 12, 2007
Kind
B2
Abstract

The present invention relates to a slurry for chemical mechanical polishing, which contains a silica polishing material, an oxidizing agent, a benzotriazole-based compound, a diketone and water.

Claims (10)

1. A slurry for chemical mechanical polishing, which comprises a silica polishing material, an oxidizing agent, a benzotriazole-based compound, a diketone and water, and

wherein said diketone is at least one type of a compound selected from the group consisting of 1,2-diketones, 1,3-diketones and 1,4-diketones, and

wherein a content weight ratio of said diketone to said benzotriazole-based compound (diketone/benzotriazole-based compound) is not less than 0.05 but not greater than 50.

2. A slurry for chemical mechanical polishing according to claim 1 , wherein a value of a pH is in a range of 1 to 7.

3. A slurry for chemical mechanical polishing according to claim 1 , wherein said silica polishing material is colloidal silica.

4. The slurry for chemical mechanical polishing according to claim 1 , wherein a content weight ratio of said diketone to said benzotriazole-based compound (diketone/benzotriazole-based compound) is not less than 0.1 but not greater than 10.

5. The slurry for chemical mechanical polishing according to claim 1 , wherein the content of the silica polishing material is not less than 1 wt %.

6. The slurry for chemical mechanical polishing according to claim 1 , wherein the content of the silica polishing material is not less than 1 wt % but not greater than 10 wt %.

7. The slurry for chemical mechanical polishing according to claim 1 , wherein the content of the benzotriazole-based compound is not less than 0.001 wt % but not greater than 0.5 wt %.

8. The slurry for chemical mechanical polishing according to claim 1 , wherein the content of the diketone is not less than 0.001 wt % but not greater than 5 wt %.

Assignments (4)
CHANGE OF ADDRESS Recorded Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →
CHANGE OF NAME Recorded Dec 22, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 025525/0145 →
MERGER Recorded Apr 25, 2008
From: TMP, CO., LTD. (FORMERLY KNOWN AS TOKYO MAGNETIC PRINTING CO., LTD.)
To: TOPPAN TDK LABEL CO., LTD.
Reel/Frame 020845/0864 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 11, 2003
From: TAIJI, TOSHIJI; TSUCHIYA, YASUAKI; ITO, TOMOYUKI; AOYAGI, KENICHI; SAKURAI, SHIN
To: NEC ELECTRONICS CORPORATION; TOKYO MAGNETIC PRINTING CO., LTD.
Reel/Frame 014278/0059 →