Method for manufacturing thin film transistor
View Patent ↗Prior to converting a non-single crystal material of a semiconductor film into a single crystal material through the use of a laser beam, at least one dopant is introduced into whole of the semiconductor film. Then, the non-single crystal semiconductor film is irradiated with a laser beam to crystallize the semiconductor film. In this case, a ratio between quasi-fermi level of the single crystal material within one of transistor formation regions used to form transistors of different conductivity types and quasi-fermi level of the single crystal material within the other thereof is made to be between 0.5:1 and 2.0:1. Thus, transistors of different conductivity types are formed in the crystallized semiconductor film.
1. A method for manufacturing a thin film transistor comprising the steps of:
depositing a non-single crystal semiconductor film on an insulting substrate;
introducing at least one dopant into the whole of said non-single crystal semiconductor film;
irradiating said non-single crystal semiconductor film with a laser beam to convert a non-single crystal material of said non-single crystal semiconductor film into a single crystal material, resulting in formation of a crystallized semiconductor film; and
forming transistors of different conductivity types in said crystallized semiconductor film,
said method being further constructed such that a ratio between quasi-fermi level of said single crystal material corresponding to one of said transistors of different conductivity types and quasi-fermi level of said single crystal material corresponding to the other of said transistors of different conductivity types is between 0.5:1 and 2.0:1
wherein introducing at least one dopant into the whole of said non-single crystal semiconductor film includes introducing said at least one dopant into the whole of said non-single crystal semiconductor film through a protective film formed on said non-single crystal semiconductor film and wherein irradiating said non-single crystal semiconductor film with a laser beam includes removing said protective film from said non-single crystal semiconductor film and then irradiating said non-single crystal semiconductor film with said laser beam.
2. The method for manufacturing a thin film transistor according to claim 1 , wherein introducing at least one dopant into the whole of said non-single crystal semiconductor film includes introducing dopant atoms of one conductivity type into said non-single crystal semiconductor film corresponding to one of said transistors of different conductivity types, and subsequently, introducing dopant atoms of the other conductivity type into said non-single crystal semiconductor film corresponding to the other of said transistors of different conductivity types.
3. The method for manufacturing a thin film transistor according to claim 1 , wherein introducing at least one dopant into the Whole of said non-single crystal semiconductor film includes introducing dopant atoms of any one of two conductivity types into the whole of said non-single crystal semiconductor film.
4. The method for manufacturing a thin film transistor according to claim 1 , further comprising the step of subjecting said crystallized semiconductor film to plasma processing and heat processing with temperatures in the range of 290 to 340 degrees C. between the step of crystallizing said non-single crystal semiconductor film to form a crystallized semiconductor non-single crystal semiconductor film and the step of forming transistors of different conductivity types in said crystallized semiconductor film.
5. The method for manufacturing a thin film transistor according to claim 4 , wherein said heat processing is carried out in an inactive gas atmosphere.
6. A method for manufacturing a thin film transistor comprising, in order, the steps of:
depositing a non-single crystal semiconductor film on an insulting substrate;
introducing a first dopant, of a first conductivity type, into substantially the whole of said non-single crystal semiconductor film, said first dopant being introduced through a protective film formed on said non-single crystal semiconductor film;
masking a surface of said non-single crystal semiconductor film to delineate first and second type transistor regions to be formed on said non-single crystal semiconductor film;
introducing a second dopant, of opposite conductivity type to said first dopant, into said non-single crystal semiconductor film, said second dopant being introduced in regions of said non-single crystal semiconductor film that are exposed by openings in said mask;
removing said mask and said protective film; and
irradiating said non-single crystal semiconductor film with a laser beam to convert a non-single crystal material of said non-single crystal semiconductor film into a single crystal material, resulting in formation of a crystallized semiconductor film; and
forming transistors of first and second conductivity types in said crystallized semiconductor film.
7. The method for manufacturing a thin film transistor according to claim 6 , wherein:
a ratio between quasi-fermi level of said single crystal material corresponding to one of said transistors of different conductivity types and quasi-fermi level of said single crystal material corresponding to the other of said transistors of different conductivity types is between 0.5:1 and 2.0:1.
8. A method for manufacturing a thin film transistor comprising, in order, the steps of:
depositing a non-single crystal semiconductor film on an insulting substrate;
depositing a protective film on said non-single crystal semiconductor film;
introducing a first dopant, of a first conductivity type, into substantially the whole of said non-single crystal semiconductor film, said first dopant being introduced through said protective film formed on said non-single crystal semiconductor film;
removing said protective film;
irradiating said non-single crystal semiconductor film with a laser beam to convert a non-single crystal material of said non-single crystal semiconductor film into a single crystal material, resulting in formation of a crystallized semiconductor film; and
masking a surface of said non-single crystal semiconductor film to delineate first and second type transistor regions to be formed on said non-single crystal semiconductor film;
introducing a second dopant, of opposite conductivity type to said first dopant, into said non-single crystal semiconductor film, said second dopant being introduced in regions of said non-single crystal semiconductor film that are exposed by openings in said mask;
forming transistors of first and second conductivity types in said crystallized semiconductor film.
9. The method as recited in claim 8 further comprising the step of:
prior to said masking step, forming a gate oxide film on said crystallized semiconductor film.
10. The method as recited in claim 8 wherein a ratio between quasi-fermi level of said single crystal material corresponding to one of said transistors of different conductivity types and quasi-fermi level of said single crystal material corresponding to the other of said transistors of different conductivity types is between 0.5:1 and 2.0:1.