Direct fet device for high frequency application
View Patent ↗A source mounted semiconductor device package is described which includes a semiconductor die having first and second opposing major surfaces, first and second major electrodes disposed on respective major surfaces and a control electrode disposed on the second major surface, and a thin metal clip electrically connected to the first major electrode of the die. The thin metal clip has a relatively large surface area, and package resistance which is caused by skin effect phenomenon is reduced thereby in high frequency applications.
1. A method for decreasing resistance in external connections of a semiconductor device package in high frequency applications, the method comprising:
providing a semiconductor die having first and second major surfaces;
providing first and second major electrodes on said respective major surfaces, and a control electrode disposed on said second major surface; and
providing a silver-plated metal clip having a flat web portion and electrically connecting said metal clip to said first major surface, said metal clip being configured to reduce the resistance of said semiconductor package when a current is supplied to said semiconductor package at a high frequency, wherein said current is supplied by a voltage regulator module, or said current is supplied by a power buck converter.
2. The method of claim 1 , wherein said high frequency is above 500KHz.
3. The method of claim 1 , wherein said high frequency is above 1 MHz.
4. The method of claim 1 , wherein said high frequency is above 2 MHz.
5. The method of claim 1 , wherein said high frequency is above 4 MHz.
6. The method of claim 1 , wherein the thickness and surface area of said metal clip are configured to reduce the overall resistance of said package at high frequency applications.
7. The method of claim 6 , wherein said clip reduces eddy currents.
8. The method of claim 1 , wherein the thickness and surface area of said metal clip are configured to reduce the overall inductance of said package at high frequency applications.
9. The method of claim 1 , wherein said resistance is caused by skin effect.
10. The method of claim 9 , wherein said clip reduces skin effect.
11. The method of claim 1 , wherein said clip is at least 4 skin depths.
12. The method of claim 1 , wherein said clip is made of copper.
13. The method of claim 1 , wherein said clip is laminated.
14. The method of claim 1 , wherein said clip has alternating layers of copper alloy and an insulator, said copper alloy laminated to said insulator.
15. The method of claim 1 , wherein said flat web portion of said clip has a surface area that is larger than said first major surface.