Method of fabricating liquid crystal display device

1. A method of fabricating a liquid crystal display device, comprising:

forming a gate electrode and a gate pad over a substrate;

forming a gate insulating film over the substrate;

forming a semiconductor layer over the gate insulating film;

forming a source electrode, a drain electrode and a data pad over the gate insulating film;

depositing an inorganic insulating material on the gate insulating film;

depositing an organic insulating material over the inorganic insulating material;

removing selectively the organic insulating material at a partial area over the drain electrode, the gate pad and the data pad, to leave a portion of the organic insulating material over the gate pad and the data pad;

patterning the gate insulating film and the inorganic insulating material using at least a portion of the remaining organic insulating material as a mask, thereby providing an inorganic protective film, an organic protective film, a drain contact hole, a gate contact hole and a data contact hole; and

forming a pixel electrode on the inorganic protective film by depositing a transparent conductive film onto the inorganic protective film and the organic protective film and patterning the transparent conductive film, and forming a gate protective electrode and a data protective electrode on the inorganic protective film.

2. The method of claim 1 , wherein, in the patterning step, the inorganic insulating material and the organic insulating material are patterned simultaneously.

3. The method of claim 1 , wherein the patterning step includes removing a certain thickness of the remaining organic insulating material after the inorganic insulating material has been patterned.

4. The method of claim 1 , wherein said inorganic insulating material is silicon nitride.

5. The method of claim 1 , wherein said organic insulating material is a photo-sensitive material.

6. The method of claim 5 , wherein said photo-sensitive material is acrylic photoresist.

7. The method of claim 1 , wherein the step of selectively removing the organic insulating material is performed using a diffracting mask.

8. The method of claim 7 , wherein a transmission part of the diffracting mask is positioned in correspondence with the gate contact hole and the drain contact hole, a diffraction part of the diffracting mask is positioned in correspondence with a partial area including the gate pad and the data pad other than the gate contact hole and the data contact hole, and a shielding part of the diffracting mask is positioned in correspondence with an area other than said partial area.