IP Library Granted Patent US 7,020,764
Granted Patent B2
US 7,020,764 · App. 10/621,330 · Granted Mar 28, 2006

Semiconductor processing device

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Quick Facts
Patent No.
US 7,020,764
App. No.
10/621,330
Granted
Mar 28, 2006
Kind
B2
Abstract

A useful semiconductor processing device (LSI) is capable of implementing the precise setting of signals at the final stage of user system development and enabling the user to build a logic circuit in the device in a very short time. The LSI includes a CPU, a flash memory which is a nonvolatile memory, a programmable logic which is a SRAM-type field programmable gate array, and a configuration circuit which implements the logic circuit configuration operation. At the event of power-on reset, logic building data stored in the flash memory is transferred to the programmable logic to establish a logic circuit in it under control of the configuration circuit, so that the logic circuit built in the programmable logic can be used immediately after the power-on reset of the device.

Claims (46)

1. A semiconductor processing device formed on a semiconductor substrate, comprising:

a central processing unit;

an SRAM-type field programmable gate array which establishes a logic circuit based on logic building data written thereto;

a nonvolatile memory which stores the logic building data establishing the logic circuit in the SRAM-type field programmable gate array; and

a configuration circuit which implements a configuration operation for said SRAM-type field programmable gate array by using the logic building data stored in said nonvolatile memory,

wherein said configuration circuit has a function of transferring the logic building data in said nonvolatile memory to said SRAM-type field programmable gate array at the event of power-on reset, and

wherein said configuration circuit includes a function of releasing an internal reset signal on completion of configuration operation.

2. A semiconductor processing device according to claim 1 , wherein said nonvolatile memory includes an exclusive bus for transferring the logic building data to said configuration circuit at the time of configuration operation.

3. A semiconductor processing device formed on a semiconductor substrate, comprising:

a central processing unit;

an SRAM-type field programmable gate array which establishes a logic circuit based on logic building data written thereto;

a nonvolatile memory which stores the logic building data establishing the logic circuit in the SRAM-type field programmable gate array;

a configuration circuit which implements a configuration operation for said SRAM-type field programmable gate array by using the logic building data stored in said nonvolatile memory;

said configuration circuit having a function of transferring the logic building data in said nonvolatile memory to said SRAM-type field programmable gate array at the event of power-on reset; and

a terminal which indicates completion of the configuration operation by said configuration circuit,

the semiconductor processing device further having a function of initiating a peripheral semiconductor device through said terminal.

4. A semiconductor processing device formed on a semiconductor substrate, comprising:

a central processing unit;

an SRAM-type field programmable gate array which establishes a logic circuit based on logic building data written thereto;

a nonvolatile memory which stores the logic building data establishing the logic circuit in the SRAM-type field programmable gate array; and

a configuration circuit which implements a configuration operation for said SRAM-type field programmable gate array by using the logic building data stored in said nonvolatile memory,

wherein said configuration circuit has a function of transferring the logic building data in said nonvolatile memory to said SRAM-type field programmable gate array at the event of power-on reset, and

wherein said nonvolatile memory comprises a flash memory.

5. A semiconductor processing device formed on a semiconductor substrate, comprising:

a central processing unit;

an SRAM-type field programmable gate array which establishes a logic circuit based on logic building data written thereto;

a nonvolatile memory which stores the logic building data establishing the logic circuit in the SRAM-type field programmable gate array; and

a configuration circuit which implements a configuration operation for said SRAM-type field programmable gate array by using the logic building data stored in said nonvolatile memory,

wherein said configuration circuit has a function of reconstructing, during the operation of said central processing unit, part of the logic building data in said SRAM-type field programmable gate array which has been transferred from said nonvolatile memory.

6. A semiconductor processing device according to claim 5 wherein said nonvolatile memory comprises a flash memory.

7. A semiconductor processing device formed on a semiconductor substrate, comprising:

a central processing unit;

an SRAM-type field programmable gate array which establishes a logic circuit based on logic building data written thereto;

a nonvolatile memory which stores the logic building data establishing the logic circuit in the SRAM-type field programmable gate array;

a configuration circuit which implements a configuration operation for said SRAM-type field programmable gate array by using the logic building data stored in said nonvolatile memory; and

a plurality of terminals in correspondence to the logic building data of said SRAM-type field programmable gate array,

wherein said configuration circuit has a function of selecting logic building data in said nonvolatile memory in correspondence to said terminals and transferring the selected data to said SRAM-type field programmable gate array.

8. A semiconductor processing device according to claim 7 , wherein said nonvolatile memory comprises a flash memory.

9. A semiconductor processing device formed on a semiconductor substrate, comprising:

a central processing unit;

an SRAM-type field programmable gate array which establishes a logic circuit based on logic building data written thereto;

a nonvolatile memory which stores the logic building data establishing the logic circuit in the SRAM-type field programmable gate array; and

a configuration circuit which implements a configuration operation for said SRAM-type field programmable gate array by using the logic building data stored in said nonvolatile memory,

wherein said configuration circuit has a register which stores a plurality of data corresponding to the logic building data of said SRAM-type field programmable gate array, and

wherein said configuration circuit includes a function of selecting logic building data in said nonvolatile memory in correspondence to the data in said register and transferring the selected data to said SRAM-type field programmable gate array.

10. A semiconductor processing device according to claim 9 , wherein said nonvolatile memory comprises a flash memory.

Assignments (5)
CHANGE OF ADDRESS Recorded Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →
CHANGE OF NAME Recorded Aug 13, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 024864/0635 →
MERGER Recorded Aug 13, 2010
From: RENESAS TECHNOLOGY CORP.
To: NEC ELECTRONICS CORPORATION
Reel/Frame 024879/0190 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 11, 2003
From: HITACHI, LTD.
To: RENESAS TECHNOLOGY CORPORATION
Reel/Frame 014244/0278 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 18, 2003
From: KUBOTA, HIDEO; YAMAZAKI, TAKANAGA
To: HITCHI, LTD.
Reel/Frame 014305/0994 →