Method and apparatus for forming conformal SiN
View Patent ↗A silicon nitride film formation method includes: Heating a substrate to be subjected to film formation to a substrate temperature; heating a wire to a wire temperature; supplying silane, ammonia, and hydrogen gases to the heating member; and forming a silicon nitride film on the substrate.
1. A silicon nitride film formation method, comprising:
heating a substrate to be subjected to film formation to a substrate temperature;
heating a wire to a wire temperature;
supplying silane, ammonia, and hydrogen gases to the heating member, wherein excess hydrogen gas is supplied in an amount sufficient to form a substantially 100% conformal silicon nitride film on the substrate, wherein the conformal silicon nitride film has a highly uniform thickness providing about 100% step coverage.
2. The method of claim 1 , wherein the substrate temperature is in the range of about 200-400° C.
3. The method of claim 1 , wherein the wire temperature is in the range of about 1800-2100° C.
4. The method of claim 1 , further comprising conducting the silicon nitride film formation method at a pressure in the range of about 10-50 millitorr.
5. A method for forming a silicon nitride film, comprising:
providing a process chamber;
heating a substrate contained within the process chamber to a substrate temperature;
heating a wire contained within the process chamber to a wire temperature;
supplying a silicon precursor material to the process chamber;
supplying a nitrogen precursor material to the process chamber;
supplying a process gas to the process chamber in an amount sufficient to form a substantially 100% conformal silicon nitride film on the substrate, wherein the conformal silicon nitride film has a highly uniform thickness providing about 100% step coverage.
6. The method of claim 5 , wherein the silicon precursor material is selected from the group consisting of SiH 4 , Si 2 H 6 , and SiH 2 Cl 2 .
7. The method of claim 5 , wherein the nitrogen precursor material is selected from the group consisting of N 2 and NH 3 .
8. The method of claim 5 , wherein the process gas comprises hydrogen.
9. The method of claim 5 , wherein the substrate temperature is in the range of about 200-400° C.
10. The method of claim 5 , wherein the wire temperature is in the range of about 1800-2100° C.
11. The method of claim 5 , further comprising conducting the silicon nitride film formation method at a pressure in the range of about 10-50 millitorr.
12. The method of claim 1 , wherein the conformal silicon nitride film has a highly uniform thickness.
13. The method of claim 1 , wherein the conformal silicon nitride film has a highly uniform thickness on all side portions.
14. The method of claim 1 , wherein the conformal silicon nitride film exhibits step coverage of very small-scale features on the substrate.
15. The method of claim 5 , wherein the conformal silicon nitride film has a highly uniform thickness.
16. The method of claim 5 , wherein the conformal silicon nitride film has a highly uniform thickness on top, bottom, and side portions.
17. The method of claim 5 , wherein the conformal silicon nitride film exhibits step coverage of very small-scale features on the substrate.