Fully differential, high Q, on-chip, impedance matching section

1. A device, comprising:

a first circuit;

a second circuit; and

an impedance matching circuit coupled between the first circuit and the second circuit, wherein the impedance matching circuit includes:

a first in-silicon inductor spiraling in a first direction, wherein the first in-silicon inductor has a plurality of turns, and

a second in-silicon inductor spiraling in a second direction opposite the first direction, wherein the second in-silicon inductor has a plurality of turns,

wherein the first in-silicon inductor is interleaved with the second in-silicon inductor,

wherein an input of the first in-silicon inductor and an input of the second in-silicon inductor receives a differential signal and an output of the first in-silicon inductor and an output of the second in-silicon inductor produces a differential signal, and

wherein a first current in the first in-silicon inductor and a second current in the second in-silicon inductor flow in a same direction in corresponding turns of the first in-silicon inductor and the second in-silicon inductor.

2. A device as recited in claim 1 , wherein a first portion of the first in-silicon inductor and a first portion of the second in-silicon inductor are formed on a first metal layer.

3. A device as recited in claim 2 , wherein a second portion of the first in-silicon inductor and a second portion of the second in-silicon inductor are formed on a second metal layer.

4. A device as recited in claim 2 , wherein a second portion of the first in-silicon inductor and a second portion of the second in-silicon inductor are formed on a second metal layer and a third metal layer.

5. The device of claim 1 , wherein the first circuit is an RF filter.

6. The device of claim 1 , wherein the first circuit is an antenna.

7. The device of claim 1 , wherein the second circuit is a low noise amplifier.